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Wide Bandgap Semiconductor Based Micro/Nano Devices

Author: Jung-Hun Seo

Publisher: MDPI

Published: 2019-04-25

Total Pages: 138

ISBN-13: 3038978426

While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices.

Wide Bandgap Semiconductor Based Micro/Nano Devices

Author: Jung-Hun Seo

Publisher:

Published: 2019

Total Pages: 138

ISBN-13: 9783038978435

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Micro- and Nanotechnology of Wide Bandgap Semiconductors

Author: Anna B Piotrowska

Publisher: Mdpi AG

Published: 2021-12-20

Total Pages: 126

ISBN-13: 9783036515229

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Owing to their unique characteristics, direct wide bandgap energy, large breakdown field, and excellent electron transport properties, including operation at high temperature environments and low sensitivity to ionizing radiation, gallium nitride (GaN) and related group III-nitride heterostructures proved to be enabling materials for advanced optoelectronic and electronic devices and systems. Today, they are widely used in high performing short wavelength light emitting diodes (LEDs) and laser diodes (LDs), high performing radar, wireless telecommunications, as well 'green' power electronics. Impressive progress in GaN technology over the last 25 years has been driven by a continuously growing need for more advanced systems, and still new challenges arise and need to be solved. Actually, lighting industry, RF defene industry, and 5G mmWave telecommunication systems are driving forces for further intense research in order to reach full potential of GaN-based semiconductors. In the literature, there is a number of review papers and publications reporting technology progress and indicating future trends. In this Special Issue of Electronics, eight papers are published, the majority of them focusing materials and process technology of GaN-based devices fabricated on native GaN substrates. The specific topics include: GaN single crystalline substrates for electronic devices by ammonothermal and HVPE methods, Selective - Area Metalorganic Vapour - Phase Epitaxy of GaN and AlGaN/GaN hetereostructures for HEMTs, Advances in Ion Implantation of GaN and Related Materials including high pressure processing (lattice reconstruction) of ion implanted GaN (Mg and Be) and III-Nitride Nanowires for electronic and optoelectronic devices.

Wide Bandgap Semiconductor-based Electronics

Author: Fan Ren

Publisher:

Published: 2020

Total Pages: 0

ISBN-13: 9780750325165

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"Advances in wide bandgap semiconductor materials are enabling the development of a new generation of power semiconductor devices that far exceed the performance of silicon-based devices. These technologies offer potential breakthrough performance for a wide range of applications, including high-power and RF electronics, deep-UV optoelectronics, quantum information and extreme-environment applications. This reference text provides comprehensive coverage of the challenges and latest research in wide and ultra-wide bandgap semiconductors. Leading researchers from around the world provide reviews on the latest development of materials and devices in these systems. The book is an essential reference for researchers and practitioners in the field of wide bandgap semiconductors and power electronics, and valuable supplementary reading for advanced courses in these areas." -- Prové de l'editor.

Vacuum Nanoelectronic Devices

Author: Anatoliy Evtukh

Publisher: John Wiley & Sons

Published: 2016-03-16

Total Pages: 472

ISBN-13: 1119037964

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Introducing up-to-date coverage of research in electron field emission from nanostructures, Vacuum Nanoelectronic Devices outlines the physics of quantum nanostructures, basic principles of electron field emission, and vacuum nanoelectronic devices operation, and offers as insight state-of-the-art and future researches and developments. This book also evaluates the results of research and development of novel quantum electron sources that will determine the future development of vacuum nanoelectronics. Further to this, the influence of quantum mechanical effects on high frequency vacuum nanoelectronic devices is also assessed. Key features: • In-depth description and analysis of the fundamentals of Quantum Electron effects in novel electron sources. • Comprehensive and up-to-date summary of the physics and technologies for THz sources for students of physical and engineering specialties and electronics engineers. • Unique coverage of quantum physical results for electron-field emission and novel electron sources with quantum effects, relevant for many applications such as electron microscopy, electron lithography, imaging and communication systems and signal processing. • New approaches for realization of electron sources with required and optimal parameters in electronic devices such as vacuum micro and nanoelectronics. This is an essential reference for researchers working in terahertz technology wanting to expand their knowledge of electron beam generation in vacuum and electron source quantum concepts. It is also valuable to advanced students in electronics engineering and physics who want to deepen their understanding of this topic. Ultimately, the progress of the quantum nanostructure theory and technology will promote the progress and development of electron sources as main part of vacuum macro-, micro- and nanoelectronics.

Semiconductor Nanostructures for Optoelectronic Devices

Author: Gyu-Chul Yi

Publisher: Springer Science & Business Media

Published: 2012-01-13

Total Pages: 347

ISBN-13: 3642224806

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This book presents the fabrication of optoelectronic nanodevices. The structures considered are nanowires, nanorods, hybrid semiconductor nanostructures, wide bandgap nanostructures for visible light emitters and graphene. The device applications of these structures are broadly explained. The book deals also with the characterization of semiconductor nanostructures. It appeals to researchers and graduate students.

Wide Bandgap Based Devices

Author: Farid Medjdoub

Publisher: MDPI

Published: 2021-05-26

Total Pages: 242

ISBN-13: 3036505660

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Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices

Wide Bandgap Light Emitting Materials And Devices

Author: Gertrude F. Neumark

Publisher: John Wiley & Sons

Published: 2008-01-08

Total Pages: 228

ISBN-13: 3527617086

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Wide bandgap light emitters include laser diodes and light-emitting diodes (LED), the most modern diodes widely used in current technologies as microelectronics and optoelectronics. Rapid advances have been made during the last few years, with the result that more research is devoted to applications in line with the expanding market for optoelectronics. This volume deals with recent research results on wide bandgap light emitting materials, introducing new concepts for devices based on these materials. The editors, scientists with the best reputations, have invited authors from different institutions who are acknowledged researchers in the field as well as being involved in industrial applications. They represent several lines of research: III-nitride compounds, ZnO and ZnSe, the most promising materials for device applications.

Wide Bandgap Nanowires

Author: Tuan Anh Pham

Publisher: John Wiley & Sons

Published: 2022-07-04

Total Pages: 361

ISBN-13: 1119774381

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WIDE BANDGAP NANOWIRES Comprehensive resource covering the synthesis, properties, and applications of wide bandgap nanowires This book presents first-hand knowledge on wide bandgap nanowires for sensor and energy applications. Taking a multidisciplinary approach, it brings together the materials science, physics and engineering aspects of wide bandgap nanowires, an area in which research has been accelerating dramatically in the past decade. Written by four well-qualified authors who have significant experience in the field, sample topics covered within the work include: Nanotechnology-enabled fabrication of wide bandgap nanowires, covering bottom-up, top-down and hybrid approaches Electrical, mechanical, optical, and thermal properties of wide bandgap nanowires, which are the basis for realizing sensor and energy device applications Measurement of electrical conductivity and fundamental electrical properties of nanowires Applications of nanowires, such as in flame sensors, biological sensors, and environmental monitoring For materials scientists, electrical engineers and professionals involved in the semiconductor industry, this book serves as a completely comprehensive resource to understand the topic of wide bandgap nanowires and how they can be successfully used in practical applications.

Nanoelectronic Materials, Devices and Modeling

Author: Qiliang Li

Publisher: MDPI

Published: 2019-07-15

Total Pages: 242

ISBN-13: 3039212257

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As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress with respect to speed and integration density. The major limitations, including low carrier mobility, degraded subthreshold slope, and heat dissipation, have become more challenging to address as the size of silicon-based metal oxide semiconductor field effect transistors (MOSFETs) has decreased to nanometers, while device integration density has increased. This book aims to present technical approaches that address the need for new nanoelectronic materials and devices. The focus is on new concepts and knowledge in nanoscience and nanotechnology for applications in logic, memory, sensors, photonics, and renewable energy. This research on nanoelectronic materials and devices will be instructive in finding solutions to address the challenges of current electronics in switching speed, power consumption, and heat dissipation and will be of great interest to academic society and the industry.