Manganese Doped Transparent Conducting Oxide Thin Films

Manganese Doped Transparent Conducting Oxide Thin Films PDF

Author: Sarath Kumar Ravindran Nair

Publisher: LAP Lambert Academic Publishing

Published: 2011-01

Total Pages: 116

ISBN-13: 9783843389723

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Transparent conducting oxide thin films doped with transition metals have attracted intense research interest following theoretical predictions of possible room temperature ferromagnetism in these films. This monograph details the growth, characterization and thermopower studies of room temperature ferromagnetic Mn doped indium oxide and indium tin oxide thin films grown by dc reactive sputtering and the influence of annealing on the properties of the films. Details of the experimental setups for measurement of thermopower using integral and differential methods and the fabrication and performance studies of transparent thin film thermocouples also form content of this monograph.

Metal-organic Chemical Vapor Deposition of Indium Oxide Based Transparent Conducting Oxide Thin Films

Metal-organic Chemical Vapor Deposition of Indium Oxide Based Transparent Conducting Oxide Thin Films PDF

Author: Jun Ni

Publisher:

Published: 2005

Total Pages:

ISBN-13:

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Four novel diamine adducts of bis(hexafluoroacetylacetonato)zinc [Zn(hfa)2·(diamine)] can be synthesized in a single step reaction. Single crystal x-ray diffraction studies reveal monomeric, six-coordinate structures. The thermal stabilities and vapor phase transport properties of these complexes are considerably greater than those of conventional solid/liquid zinc metal-organic chemical vapor deposition (MOCVD) precursors. Of the four complexes, bis(1,1,1,5,5,5-hexafluoro-2,4-pentadionato)(N,N '-diethylethylenediamine)zinc [Zn(hfa)2 ( N,N'-DEA)], is particularly effective in the growth of thin films of the transparent conducting oxide Zn- and Sn-doped In2O3 (ZITO) due to its superior volatility and low melting point of 64°C.

Optoelectronics

Optoelectronics PDF

Author: Sergei Pyshkin

Publisher: BoD – Books on Demand

Published: 2017-07-12

Total Pages: 374

ISBN-13: 9535133691

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Optoelectronics - Advanced Device Structures (Book IV) is following the Optoelectronics (Books I, II, and III) published in 2011, 2013, and 2015, as part of the InTech collection of international works on optoelectronics. Accordingly, as with the first three books of the collection, this book covers recent achievements by specialists around the world. The growing number of countries participating in this endeavor as well as joint participation of the US and Moldova scientists in edition of this book testifies to the unifying effect of science. An interested reader will find in the book the description of properties and applications employing organic and inorganic materials, as well as the methods of fabrication and analysis of operation and regions of application of modern optoelectronic devices.

Optical Thin Films and Structures

Optical Thin Films and Structures PDF

Author: Tsvetanka Babeva

Publisher: MDPI

Published: 2021-06-22

Total Pages: 128

ISBN-13: 3036508929

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The book is devoted to the design, application and characterization of thin films and structures, with special emphasis on optical applications. It comprises ten papers—five featured and five regular—authored by scientists all over the world. Diverse materials are studied and their possible applications are demonstrated and discussed—transparent conductive coatings and structures from ZnO doped with Al and Ga and Ti-doped SnO2, polymers and nanosized zeolite thin films for optical sensing, TiO2 with linear and nonlinear optical properties, organic diamagnetic materials, broadband optical coatings, CrWN glass molding coatings, and silicon on insulator waveguides.

The Synthesis, Characterisation and Application of Transparent Conducting Thin Films

The Synthesis, Characterisation and Application of Transparent Conducting Thin Films PDF

Author: M. R. Waugh

Publisher:

Published: 2011

Total Pages:

ISBN-13:

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Transparent conducting thin films of metal oxides, doped metal oxides, and carbon nanotubes (CNTs), have been produced using various deposition techniques, including: Aerosol Assisted Chemical Vapour Deposition (AACVD), Atmospheric Pressure Chemical Vapour Deposition (APCVD), and Spray Coating. The resultant thin films were tested for their performance in a number of applications, including: Low emissivity ('Low-E') glazing, photovoltaic electrode materials, gas sensing and photocatalysis. AACVD was shown as a viable, and attractive, deposition technique for the synthesis of tin oxide, and doped tin oxide thin films, which allows for controllable doping levels, crystallinity, and surface structure. The tailoring of these physical attributes allows for enhanced performance of the functional properties of the films, whereby, a lower growth temperature produced highly transparent, highly conductive coatings with a low haze value for 'Low-E' applications, whereas, higher growth temperatures produced the high electrical conductivity, transparency, and light scattering properties required for high performance electrodes in thin film photovoltaics. In addition, a dual coating methodology was developed using both AACVD, and APCVD, to grow tin oxide thin films in a rapid timescale, but with modified surface structures showing changes to the short range waviness, kurtosis, and the surface area. Growth of carbon nanotubes, using CVD, was investigated over a range of metal catalysts, with varying Pauling electronegativity values, and over a range of temperature, methane, and hydrogen conditions. A growth mechanism has been postulated, whereby, the electronegativity of the metal catalyst, and the solubility and diffusion of the carbon through that catalyst, affects the type and properties of the carbon structure produced. To the authors knowledge, this is the first reported growth of MWCNTs using a chromium solo-metal catalyst, and the first reported growth of the unique 'carbon nanofibres' which were produced using gold and silver metal catalysts. Functionalisation of SWCNTs using a microwave reflux process was shown to yield sulphonate and sulphone modified nanotubes, which are highly soluble in water and able to undergo spray coating to produce carbon nanotube, nanonet transparent conducting thin films. The functionalisation process was shown to be reversible upon heating of the modified nanotubes. AACVD has been deemed unable to produced doped zinc oxide transparent conducting films. However, undoped zinc oxide films were produced. They displayed a high photocatalytic action in the degredation of stearic acid, and a UV light induced superhydrophilicity. The modification and deposition techniques, established throughout this work, were utilised to form transparent, hybrid, metal oxide-CNT coatings, for gas sensing. The hybrid materials displayed enhanced response times to combustible target gases, which has been attributed to the catalytic effects of the exposed carbon nanotube surfaces; and to the spillover of adsorbed oxygen from the active nanotubes to the metal oxide surface.

Optical, Electrical and Microstructural Properties of Tin Doped Indium Oxide Films Made from Sintered Nanoparticles

Optical, Electrical and Microstructural Properties of Tin Doped Indium Oxide Films Made from Sintered Nanoparticles PDF

Author: Annette Hultaker

Publisher:

Published: 2001

Total Pages: 5

ISBN-13:

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Thin transparent and electrically conductive films of tin doped indium oxide (ITO) were made by sintering of nanoparticle dispersions. The resistivity decreased to 1 - 10(exp -2) Omega cm upon treatment at 800 deg C, while the luminous transmittance remained high. The property evolution was connected with sintering and densification as studied by Scanning Electron Microscopy, X-ray Diffraction, X-ray Fluorescence and Elastic Recoil Detection Analysis.

Metalorganic Vapor Phase Epitaxy (MOVPE)

Metalorganic Vapor Phase Epitaxy (MOVPE) PDF

Author: Stuart Irvine

Publisher: John Wiley & Sons

Published: 2019-10-07

Total Pages: 582

ISBN-13: 1119313015

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Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

The Role of Dopant Distribution on the Optoelectronic Properties of Tin-doped Indium Oxide Films

The Role of Dopant Distribution on the Optoelectronic Properties of Tin-doped Indium Oxide Films PDF

Author: Sebastien Dahmane Lounis

Publisher:

Published: 2014

Total Pages: 126

ISBN-13:

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Colloidally prepared nanocrystals of transparent conducting oxide (TCO) semiconductors have emerged in the past decade as an exciting new class of plasmonic materials. In recent years, there has been tremendous progress in developing synthetic methods for the growth of these nanocrystals, basic characterization of their properties, and their successful integration into optoelectronic and electrochemical devices. However, many fundamental questions remain about the physics of localized surface plasmon resonance (LSPR) in these materials, and how their optoelectronic properties derive from their underlying structural properties. In particular, the influence of the concentration and distribution of dopant ions and compensating defects on the optoelectronic properties of TCO nanocrystals has seen little investigation. Indium tin oxide (ITO) is the most widely studied and commercially deployed TCO. Herein we investigate the role of the distribution of tin dopants on the optoelectronic properties of colloidally prepared ITO nanocrystals. Owing to a high free electron density, ITO nanocrystals display strong LSPR absorption in the near infrared. Depending on the particular organic ligands used, they are soluble in various solvents and can readily be integrated into densely packed nanocrystal films with high conductivities. Using a combination of spectroscopic techniques, modeling and simulation of the optical properties of the nanocrystals using the Drude model, and transport measurements, it is demonstrated herein that the radial distribution of tin dopants has a strong effect on the optoelectronic properties of ITO nanocrystals. ITO nanocrystals were synthesized in both surface-segregated and uniformly distributed dopant profiles. Temperature dependent measurements of optical absorbance were first combined with Drude modeling to extract the internal electrical properties of the ITO nanocrystals, demonstrating that they are well-behaved degenerately doped semiconductors displaying finite conductivity at low temperature and room temperature conductivity reduced by one order of magnitude from that of high-quality thin film ITO. Synchrotron based x-ray photoelectron spectroscopy (XPS) was then employed to perform detailed depth profiling of the elemental composition of ITO nanocrystals, confirming the degree of dopant surface-segregation. Based on free carrier concentrations extracted from Drude fitting of LSPR absorbance, an inverse correlation was found between surface segregation of tin and overall dopant activation. Furthermore, radial distribution of dopants was found to significantly affect the lineshape and quality factor of the LSPR absorbance. ITO nanocrystals with highly surface segregated dopants displayed symmetric LSPRs with high quality factors, while uniformly doped ITO nanocrystals displayed asymmetric LSPRs with reduced quality factors. These effects are attributed to damping of the plasmon by Coulombic scattering off ionized dopant impurities. Finally, the distribution of dopants is also found to influence the conductivity of ITO nanocrystal films. Films made from nanocrystals with a high degree of surface segregation demonstrated one order of magnitude higher conductivity than those based on uniformly doped crystals. However, no evidence was found for differences in the surface electronic structure from one type of crystal to the other based on XPS and the exact mechanism for this difference is still not understood. Several future studies to further illuminate the influence of dopant distribution on ITO nanocrystals are suggested. Using synchrotron radiation, detailed photoelectron spectroscopy on clean ITO nanocrystal surfaces, single-nanoparticle optical measurements, and hard x-ray structural studies will all be instructive in elucidating the interaction between oscillating free electrons and defect scattering centers when a plasmon is excited. In addition, measurements of temperature and surface treatment-dependent conductivity with carefully controlled atmosphere and surface chemistry will be needed in order to better understand the transport properties of ITO nanocrystal films. Each of these studies will enable better fundamental knowledge of the plasmonic properties of nanostructures and improve the development of nanocrystal based plasmonic devices.