The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2 PDF

Author: B.E. Deal

Publisher: Springer Science & Business Media

Published: 2013-11-09

Total Pages: 505

ISBN-13: 1489915885

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The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface--5

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface--5 PDF

Author: Hisham Z. Massoud

Publisher: ECS Transactions

Published: 2005-01-01

Total Pages: 304

ISBN-13: 9781566774307

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This issue of ECS Transactions places a focus on ultrathin gate dielectrics: novel technologies, characterization methods, process modeling, fundamental limits, and projections for scaling the gate oxide thickness.

The Physics of SiO2 and Its Interfaces

The Physics of SiO2 and Its Interfaces PDF

Author: Sokrates T. Pantelides

Publisher: Elsevier

Published: 2013-09-17

Total Pages: 501

ISBN-13: 148313900X

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The Physics of SiO2 and Its Interfaces covers the proceedings of the International Topical Conference on the Physics of SiO2 and its Interfaces, held at the IBM Thomas J. Watson Research Center, Yorktown Heights, New York on March 22-24, 1978. The book focuses on the properties, reactions, transformations, and structures of silicon dioxide (SiO2). The selection first discusses the electronic properties of vitreous SiO2 and small polaron formation and motion of holes in a-SiO2. Discussions focus on mobility edges and polarons, deep states in the gap, and excitons. The text also ponders on field-dependent hole and exciton transport in SiO2 and electron emission from SiO2 into vacuum. The publication takes a look at the electronic structures of crystalline and amorphous SiO2; band structures and electronic properties of SiO2; and optical absorption spectrum of SiO2. The text also tackles chemical bond and related properties of SiO2; topological effects on the band structure of silica; and properties of localized SiO2 clusters in layers of disordered silicon on silver. The selection is a good reference for physicists and readers interested in the physics of silicon dioxide.

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface PDF

Author: B.E. Deal

Publisher: Springer Science & Business Media

Published: 2013-11-11

Total Pages: 543

ISBN-13: 1489907742

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The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.

The Si-SiO2 System

The Si-SiO2 System PDF

Author: P. Balk

Publisher: Elsevier Publishing Company

Published: 1988

Total Pages: 376

ISBN-13:

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The Si-SiO 2 system has been the subject of concentrated research for over 25 years, particularly because of its key role in silicon integrated circuits. However, only a few comprehensive treatises on this field have been published in recent years. This book focuses on the materials science and technology aspects of the system. Its aim is to give a comprehensive overview of the topic, including an extensive list of references giving easy access to the literature. After an introductory chapter which reviews the Si-SiO 2 system from the perspective of other semiconductor-insulator combinations of technical interest, the technology of oxide preparation is discussed. Fundamental questions regarding the structure and chemistry of the interfacial region are then addressed. Two chapters are concerned with system properties: one deals with the physico-chemical, electrical and device-related characteristics and the way these are affected by the technology of oxide preparation; a second chapter focuses on point defects and charge trapping. The book concludes with a broad review of the techniques available for electrical characterization of the system, including the physical background.

Silicon Oxidation Studies: A Review of Recent Studies on Thin Film Silicon Dioxide Formation in The Physics and Chemistry of SiO2 and the Si-SiO2 Interface

Silicon Oxidation Studies: A Review of Recent Studies on Thin Film Silicon Dioxide Formation in The Physics and Chemistry of SiO2 and the Si-SiO2 Interface PDF

Author: E. A. Irene

Publisher:

Published: 1988

Total Pages: 16

ISBN-13:

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The formation of the thin silicon dioxide (SiO2) films via thermal oxidation on single crystal silicon substrates has been found to depend on the method of Si cleaning, impurities on the Si surface, the Si crystal orientation, film stress, and the availability of electrons at the Si surface. Recent studies on these topics are recounted along with a framework for understanding. No fully acceptable model for thin Si02 formation yet exists, but recent studies lead in new directions towards this goal.

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