Switch-Level Timing Simulation of MOS VLSI Circuits

Switch-Level Timing Simulation of MOS VLSI Circuits PDF

Author: Vasant B. Rao

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 218

ISBN-13: 1461317096

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Only two decades ago most electronic circuits were designed with a slide-rule, and the designs were verified using breadboard techniques. Simulation tools were a research curiosity and in general were mistrusted by most designers and test engineers. In those days the programs were not user friendly, models were inadequate, and the algorithms were not very robust. The demand for simulation tools has been driven by the increasing complexity of integrated circuits and systems, and it has been aided by the rapid decrease in the cost of com puting that has occurred over the past several decades. Today a wide range of tools exist for analYSiS, deSign, and verification, and expert systems and synthesis tools are rapidly emerging. In this book only one aspect of the analysis and design process is examined. but it is a very important aspect that has received much attention over the years. It is the problem of accurate circuit and timing simulation.

Digital Timing Macromodeling for VLSI Design Verification

Digital Timing Macromodeling for VLSI Design Verification PDF

Author: Jeong-Taek Kong

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 276

ISBN-13: 1461523214

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Digital Timing Macromodeling for VLSI Design Verification first of all provides an extensive history of the development of simulation techniques. It presents detailed discussion of the various techniques implemented in circuit, timing, fast-timing, switch-level timing, switch-level, and gate-level simulation. It also discusses mixed-mode simulation and interconnection analysis methods. The review in Chapter 2 gives an understanding of the advantages and disadvantages of the many techniques applied in modern digital macromodels. The book also presents a wide variety of techniques for performing nonlinear macromodeling of digital MOS subcircuits which address a large number of shortcomings in existing digital MOS macromodels. Specifically, the techniques address the device model detail, transistor coupling capacitance, effective channel length modulation, series transistor reduction, effective transconductance, input terminal dependence, gate parasitic capacitance, the body effect, the impact of parasitic RC-interconnects, and the effect of transmission gates. The techniques address major sources of errors in existing macromodeling techniques, which must be addressed if macromodeling is to be accepted in commercial CAD tools by chip designers. The techniques presented in Chapters 4-6 can be implemented in other macromodels, and are demonstrated using the macromodel presented in Chapter 3. The new techniques are validated over an extremely wide range of operating conditions: much wider than has been presented for previous macromodels, thus demonstrating the wide range of applicability of these techniques.

Analog Design Issues in Digital VLSI Circuits and Systems

Analog Design Issues in Digital VLSI Circuits and Systems PDF

Author: Juan J. Becerra

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 153

ISBN-13: 1461561019

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Analog Design Issues in Digital VLSI Circuits and Systems brings together in one place important contributions and up-to-date research results in this fast moving area. Analog Design Issues in Digital VLSI Circuits and Systems serves as an excellent reference, providing insight into some of the most challenging research issues in the field.

Electrothermal Analysis of VLSI Systems

Electrothermal Analysis of VLSI Systems PDF

Author: Yi-Kan Cheng

Publisher: Springer Science & Business Media

Published: 2005-12-01

Total Pages: 220

ISBN-13: 0306470241

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This useful book addresses electrothermal problems in modern VLSI systems. It discusses electrothermal phenomena and the fundamental building blocks that electrothermal simulation requires. The authors present three important applications of VLSI electrothermal analysis: temperature-dependent electromigration diagnosis, cell-level thermal placement, and temperature-driven power and timing analysis.

Hot-Carrier Reliability of MOS VLSI Circuits

Hot-Carrier Reliability of MOS VLSI Circuits PDF

Author: Yusuf Leblebici

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 223

ISBN-13: 1461532507

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As the complexity and the density of VLSI chips increase with shrinking design rules, the evaluation of long-term reliability of MOS VLSI circuits is becoming an important problem. The assessment and improvement of reliability on the circuit level should be based on both the failure mode analysis and the basic understanding of the physical failure mechanisms observed in integrated circuits. Hot-carrier induced degrada tion of MOS transistor characteristics is one of the primary mechanisms affecting the long-term reliability of MOS VLSI circuits. It is likely to become even more important in future generation chips, since the down ward scaling of transistor dimensions without proportional scaling of the operating voltage aggravates this problem. A thorough understanding of the physical mechanisms leading to hot-carrier related degradation of MOS transistors is a prerequisite for accurate circuit reliability evaluation. It is also being recognized that important reliability concerns other than the post-manufacture reliability qualification need to be addressed rigorously early in the design phase. The development and use of accurate reliability simulation tools are therefore crucial for early assessment and improvement of circuit reliability : Once the long-term reliability of the circuit is estimated through simulation, the results can be compared with predetermined reliability specifications or limits. If the predicted reliability does not satisfy the requirements, appropriate design modifications may be carried out to improve the resistance of the devices to degradation.

Mixed-Mode Simulation and Analog Multilevel Simulation

Mixed-Mode Simulation and Analog Multilevel Simulation PDF

Author: Resve A. Saleh

Publisher: Springer Science & Business Media

Published: 2013-03-09

Total Pages: 310

ISBN-13: 1475758545

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Mixed-Mode Simulation and Analog Multilevel Simulation addresses the problems of simulating entire mixed analog/digital systems in the time-domain. A complete hierarchy of modeling and simulation methods for analog and digital circuits is described. Mixed-Mode Simulation and Analog Multilevel Simulation also provides a chronology of the research in the field of mixed-mode simulation and analog multilevel simulation over the last ten to fifteen years. In addition, it provides enough information to the reader so that a prototype mixed-mode simulator could be developed using the algorithms in this book. Mixed-Mode Simulation and Analog Multilevel Simulation can also be used as documentation for the SPLICE family of mixed-mode programs as they are based on the algorithms and techniques described in this book.

Hierarchical Modeling for VLSI Circuit Testing

Hierarchical Modeling for VLSI Circuit Testing PDF

Author: Debashis Bhattacharya

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 168

ISBN-13: 1461315271

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Test generation is one of the most difficult tasks facing the designer of complex VLSI-based digital systems. Much of this difficulty is attributable to the almost universal use in testing of low, gate-level circuit and fault models that predate integrated circuit technology. It is long been recognized that the testing prob lem can be alleviated by the use of higher-level methods in which multigate modules or cells are the primitive components in test generation; however, the development of such methods has proceeded very slowly. To be acceptable, high-level approaches should be applicable to most types of digital circuits, and should provide fault coverage comparable to that of traditional, low-level methods. The fault coverage problem has, perhaps, been the most intractable, due to continued reliance in the testing industry on the single stuck-line (SSL) fault model, which is tightly bound to the gate level of abstraction. This monograph presents a novel approach to solving the foregoing problem. It is based on the systematic use of multibit vectors rather than single bits to represent logic signals, including fault signals. A circuit is viewed as a collection of high-level components such as adders, multiplexers, and registers, interconnected by n-bit buses. To match this high-level circuit model, we introduce a high-level bus fault that, in effect, replaces a large number of SSL faults and allows them to be tested in parallel. However, by reducing the bus size from n to one, we can obtain the traditional gate-level circuit and models.

Mixed-Mode Simulation

Mixed-Mode Simulation PDF

Author: Resve A. Saleh

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 223

ISBN-13: 1461306957

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Our purpose in writing this book was two-fold. First, we wanted to compile a chronology of the research in the field of mixed-mode simulation over the last ten to fifteen years. A substantial amount of work was done during this period of time but most of it was published in archival form in Masters theses and Ph. D. dissertations. Since the interest in mixed-mode simulation is growing, and a thorough review of the state-of-the-art in the area was not readily available, we thought it appropriate to publish the information in the form of a book. Secondly, we wanted to provide enough information to the reader so that a proto type mixed-mode simulator could be developed using the algorithms in this book. The SPLICE family of programs is based on the algorithms and techniques described in this book and so it can also serve as docu mentation for these programs. ACKNOWLEDGEMENTS The authors would like to dedicate this book to Prof. D. O. Peder son for inspiring this research work and for providing many years of support and encouragement The authors enjoyed many fruitful discus sions and collaborations with Jim Kleckner, Young Kim, Alberto Sangiovanni-Vincentelli, and Jacob White, and we thank them for their contributions. We also thank the countless others who participated in the research work and read early versions of this book. Lillian Beck provided many useful suggestions to improve the manuscript. Yun cheng Ju did the artwork for the illustrations.

Micro System Technologies 90

Micro System Technologies 90 PDF

Author: Herbert Reichl

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 843

ISBN-13: 3642456782

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On September 10-13, 1990, the first international meeting on Microsystem Technologies takes place at the Berlin International Congress Center. Most of the traditional congresses deal with themes that become more and more specific, and only a small part of the scientific world is reflected. The Micro System Technologies is attempting to take the opposite direction: During the last two decades the development of microelectronics was characterized by a tremendous increase of complexity of integrated circuits. At the same time the fields of microoptics and micromechanics have been developed to an advanced state of the art by the application of thin film and semiconductor technologies. The trend of the future development is to increase the integration density by combining the microelectronic, microoptic, and micro mechanic aspects to new complex multifunctional systems, which are able to comprise sensors, actuators, analogue and digital circuits on the same chip or on multichip-modules. Microsystems will lead to extensions of the field of microelectronic applications with important technical alterations and can open new considerable markets. For the realization of economical solutions for microsystems a lot of interdisciplinary cooperation and know-how has to be developed. New materials for sensitive layers, substrates, conducting, semiconducting, or isolating thin films are the basis for the development of new technologies. The increasing complexity leads to increasing interaction among electrical and non-electrical quantities.