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Spintronics in Nanoscale Devices

Author: Eric R. Hedin

Publisher: CRC Press

Published: 2016-04-19

Total Pages: 213

ISBN-13: 9814411701

By exploiting the novel properties of quantum dots and nanoscale Aharonov-Bohm rings together with the electronic and magnetic properties of various semiconductor materials and graphene, researchers have conducted numerous theoretical and computational modeling studies and experimental tests that show promising behavior for spintronics applications

Spintronics for Next Generation Innovative Devices

Author: Katsuaki Sato

Publisher: John Wiley & Sons

Published: 2015-09-28

Total Pages: 274

ISBN-13: 1118751914

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Spintronics (short for spin electronics, or spin transport electronics) exploits both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, in solid-state devices. Controlling the spin of electrons within a device can produce surprising and substantial changes in its properties. Drawing from many cutting edge fields, including physics, materials science, and electronics device technology, spintronics has provided the key concepts for many next generation information processing and transmitting technologies. This book discusses all aspects of spintronics from basic science to applications and covers: • magnetic semiconductors • topological insulators • spin current science • spin caloritronics • ultrafast magnetization reversal • magneto-resistance effects and devices • spin transistors • quantum information devices This book provides a comprehensive introduction to Spintronics for researchers and students in academia and industry.

Nanoscale Devices

Author: Brajesh Kumar Kaushik

Publisher: CRC Press

Published: 2018-11-16

Total Pages: 432

ISBN-13: 1351670220

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The primary aim of this book is to discuss various aspects of nanoscale device design and their applications including transport mechanism, modeling, and circuit applications. . Provides a platform for modeling and analysis of state-of-the-art devices in nanoscale regime, reviews issues related to optimizing the sub-nanometer device performance and addresses simulation aspect and/or fabrication process of devices Also, includes design problems at the end of each chapter

Nanomagnetism and Spintronics

Author: Teruya Shinjo

Publisher: Elsevier Inc. Chapters

Published: 2013-10-07

Total Pages: 372

ISBN-13: 0128086750

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This overview is a brief introduction to the subjects covered by this book, nanomagnetism and spintronics. The discovery of giant magnetoresistance (GMR) effect is described together with a short summary of the studies prior to the experiments on GMR. Studies on various kinds of magnetoresistance (MR) effect that were inspired by the GMR effect are reviewed and recent topics are introduced. In many novel phenomena involving the interplay of electric conductance and magnetization, the role of the “spin current” has been revealed to be important and the possibility for exploiting these phenomena in spintronics devices has been suggested. Nanoscale devices are indispensable to fundamental studies on spintronics and also to various technical devices, and therefore gaining an understanding of nanomagnetism is a crucial current issue. At the end of this section, the scope of this book is described in brief with the content of each chapter.

Nanoscale Electronic Devices and Their Applications

Author: Khurshed Ahmad Shah

Publisher: CRC Press

Published: 2020

Total Pages: 219

ISBN-13: 9780367808624

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Nanoscale Electronic Devices and Their Applications helps readers acquire a thorough understanding of the fundamentals of solids at the nanoscale level in addition to their applications including operation and properties of recent nanoscale devices. This book includes seven chapters that give an overview of electrons in solids, carbon nanotube devices and their applications, doping techniques, construction and operational details of channel-engineered MOSFETs, and spintronic devices and their applications. Structural and operational features of phase-change memory (PCM), memristor, and resistive random-access memory (ReRAM) are also discussed. In addition, some applications of these phase-change devices to logic designs have been presented. Aimed at senior undergraduate students in electrical engineering, micro-electronics engineering, physics, and device physics, this book:  Covers a wide area of nanoscale devices while explaining the fundamental physics in these devices  Reviews information on CNT two- and three-probe devices, spintronic devices, CNT interconnects, CNT memories, and NDR in CNT FETs  Discusses spin-controlled devices and their applications, multi-material devices, and gates in addition to phase-change devices  Includes rigorous mathematical derivations of the semiconductor physics  Illustrates major concepts thorough discussions and various diagrams

Nanomagnetism and Spintronics

Author: Teruya Shinjo

Publisher: Elsevier

Published: 2013-10-07

Total Pages: 373

ISBN-13: 0444632778

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The concise and accessible chapters of Nanomagnetism and Spintronics, Second Edition, cover the most recent research in areas of spin-current generation, spin-calorimetric effect, voltage effects on magnetic properties, spin-injection phenomena, giant magnetoresistance (GMR), and tunnel magnetoresistance (TMR). Spintronics is a cutting-edge area in the field of magnetism that studies the interplay of magnetism and transport phenomena, demonstrating how electrons not only have charge but also spin. This second edition provides the background to understand this novel physical phenomenon and focuses on the most recent developments and research relating to spintronics. This exciting new edition is an essential resource for graduate students, researchers, and professionals in industry who want to understand the concepts of spintronics, and keep up with recent research, all in one volume. Provides a concise, thorough evaluation of current research Surveys the important findings up to 2012 Examines the future of devices and the importance of spin current

Spintronics Handbook, Second Edition: Spin Transport and Magnetism

Author: Evgeny Y. Tsymbal

Publisher: CRC Press

Published: 2019-06-26

Total Pages: 646

ISBN-13: 0429805268

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Spintronics Handbook, Second Edition offers an update on the single most comprehensive survey of the two intertwined fields of spintronics and magnetism, covering the diverse array of materials and structures, including silicon, organic semiconductors, carbon nanotubes, graphene, and engineered nanostructures. It focuses on seminal pioneering work, together with the latest in cutting-edge advances, notably extended discussion of two-dimensional materials beyond graphene, topological insulators, skyrmions, and molecular spintronics. The main sections cover physical phenomena, spin-dependent tunneling, control of spin and magnetism in semiconductors, and spin-based applications. Features: Presents the most comprehensive reference text for the overlapping fields of spintronics (spin transport) and magnetism. Covers the full spectrum of materials and structures, from silicon and organic semiconductors to carbon nanotubes, graphene, and engineered nanostructures. Extends coverage of two-dimensional materials beyond graphene, including molybdenum disulfide and study of their spin relaxation mechanisms Includes new dedicated chapters on cutting-edge topics such as spin-orbit torques, topological insulators, half metals, complex oxide materials and skyrmions. Discusses important emerging areas of spintronics with superconductors, spin-wave spintronics, benchmarking of spintronics devices, and theory and experimental approaches to molecular spintronics. Evgeny Tsymbal's research is focused on computational materials science aiming at the understanding of fundamental properties of advanced ferromagnetic and ferroelectric nanostructures and materials relevant to nanoelectronics and spintronics. He is a George Holmes University Distinguished Professor at the Department of Physics and Astronomy of the University of Nebraska-Lincoln (UNL), Director of the UNL’s Materials Research Science and Engineering Center (MRSEC), and Director of the multi-institutional Center for NanoFerroic Devices (CNFD). Igor Žutić received his Ph.D. in theoretical physics at the University of Minnesota. His work spans a range of topics from high-temperature superconductors and ferromagnetism that can get stronger as the temperature is increased, to prediction of various spin-based devices. He is a recipient of 2006 National Science Foundation CAREER Award, 2005 National Research Council/American Society for Engineering Education Postdoctoral Research Award, and the National Research Council Fellowship (2003-2005). His research is supported by the National Science Foundation, the Office of Naval Research, the Department of Energy, and the Airforce Office of Scientific Research.

Semiconductor Spintronics and Quantum Computation

Author: D.D. Awschalom

Publisher: Springer Science & Business Media

Published: 2013-04-17

Total Pages: 321

ISBN-13: 366205003X

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The past few decades of research and development in solid-state semicon ductor physics and electronics have witnessed a rapid growth in the drive to exploit quantum mechanics in the design and function of semiconductor devices. This has been fueled for instance by the remarkable advances in our ability to fabricate nanostructures such as quantum wells, quantum wires and quantum dots. Despite this contemporary focus on semiconductor "quantum devices," a principal quantum mechanical aspect of the electron - its spin has it accounts for an added quan largely been ignored (except in as much as tum mechanical degeneracy). In recent years, however, a new paradigm of electronics based on the spin degree of freedom of the electron has begun to emerge. This field of semiconductor "spintronics" (spin transport electron ics or spin-based electronics) places electron spin rather than charge at the very center of interest. The underlying basis for this new electronics is the intimate connection between the charge and spin degrees of freedom of the electron via the Pauli principle. A crucial implication of this relationship is that spin effects can often be accessed through the orbital properties of the electron in the solid state. Examples for this are optical measurements of the spin state based on the Faraday effect and spin-dependent transport measure ments such as giant magneto-resistance (GMR). In this manner, information can be encoded in not only the electron's charge but also in its spin state, i. e.

Graphene in Spintronics

Author: Junichiro Inoue

Publisher: CRC Press

Published: 2016-05-25

Total Pages: 306

ISBN-13: 9814669571

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The discovery and fabrication of new materials have opened the gate for new research fields in science and technology. The novel method of fabricating graphene, a purely 2D carbon lattice, and the discovery of the phenomenon of giant magnetoresistance (GMR) in magnetic multilayers are not exceptions. The latter has brought about the creation of the new technological field of spintronics, which utilizes both spin and charge degrees of freedom of electrons. As for the former, many applications have been proposed; however, no practical devices have yet been developed in the field of spintronics. The aim of this book is to provide possible hints to overcome the difficulties in graphene applications in the field of spintronics by comparing the physical properties of graphene and magnetoresistive (MR) phenomena in spintronics. The book will be useful for advanced undergraduate students and graduate students of physics, chemistry, and materials science and young researchers in nanotechnology and the field of spintronics.

Introduction to the Physics of Nanoelectronics

Author: Seng Ghee Tan

Publisher: Elsevier

Published: 2012-03-28

Total Pages: 308

ISBN-13: 0857095889

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This book provides an introduction to the physics of nanoelectronics, with a focus on the theoretical aspects of nanoscale devices. The book begins with an overview of the mathematics and quantum mechanics pertaining to nanoscale electronics, to facilitate the understanding of subsequent chapters. It goes on to encompass quantum electronics, spintronics, Hall effects, carbon and graphene electronics, and topological physics in nanoscale devices. Theoretical methodology is developed using quantum mechanical and non-equilibrium Green’s function (NEGF) techniques to calculate electronic currents and elucidate their transport properties at the atomic scale. The spin Hall effect is explained and its application to the emerging field of spintronics – where an electron’s spin as well as its charge is utilised – is discussed. Topological dynamics and gauge potential are introduced with the relevant mathematics, and their application in nanoelectronic systems is explained. Graphene, one of the most promising carbon-based nanostructures for nanoelectronics, is also explored. Begins with an overview of the mathematics and quantum mechanics pertaining to nanoscale electronics Encompasses quantum electronics, spintronics, Hall effects, carbon and graphene electronics, and topological physics in nanoscale devices Comprehensively introduces topological dynamics and gauge potential with the relevant mathematics, and extensively discusses their application in nanoelectronic systems