Silicon Non-Volatile Memories

Silicon Non-Volatile Memories PDF

Author: Barbara de Salvo

Publisher: John Wiley & Sons

Published: 2013-05-10

Total Pages: 222

ISBN-13: 1118617800

DOWNLOAD EBOOK →

Semiconductor flash memory is an indispensable component of modern electronic systems which has gained a strategic position in recent decades due to the progressive shift from computing to consumer (and particularly mobile) products as revenue drivers for Integrated Circuits (IC) companies. This book provides a comprehensive overview of the different technological approaches currently being studied to fulfill future memory requirements. Two main research paths are identified and discussed. Different "evolutionary paths" based on the use of new materials (such as silicon nanocrystals for storage nodes and high-k insulators for active dielectrics) and of new transistor structures (such as multi-gate devices) are investigated in order to extend classical floating gate technology to the 32 nm node. "Disruptive paths" based on new storage mechanisms or new technologies (such as phase-change devices, polymer or molecular cross-bar memories) are also covered in order to address 22 nm and smaller IC generations. Finally, the main factors at the origin of these phenomena are identified and analyzed, providing pointers on future research activities and developments in this area.

Non Volatile Memories Based on Silicon Dots

Non Volatile Memories Based on Silicon Dots PDF

Author: Isodiana Crupi

Publisher: LAP Lambert Academic Publishing

Published: 2010-12

Total Pages: 124

ISBN-13: 9783843383462

DOWNLOAD EBOOK →

Our daily life tells us that new technologies are continuously developed. Personal computer, cellular phones, digital camera, mp3 player pervade our life. Looking into the recent past, electronic devices have been proliferated reduced in the size and improved in the performances. Since memories are present in almost every electronic system, these technological advances depend on the development of the semiconductor memory itself. Since the very beginning of such development, the information in conventional non volatile memory device can be stored in a conductive floating gate or in an insulating layer such as in MNOS. Over the years the memory market has been continuously increasing and this has led, in the 1995, to the introduction of a new memory cell based on discrete traps. It was already clear at that point that the realization of such memory cell would be difficult. The scientific community is still very uncertain about the questions whether, and how such device could work. Since then, there has been a lot of progress in the field of memory cell based on discrete traps, but the basic questions about the real advantages offered by such memory devices are still open today.

Logic Non-volatile Memory: The Nvm Solutions For Ememory

Logic Non-volatile Memory: The Nvm Solutions For Ememory PDF

Author: Charles Ching-hsiang Hsu

Publisher: World Scientific

Published: 2014-03-18

Total Pages: 319

ISBN-13: 9814460923

DOWNLOAD EBOOK →

Would you like to add the capabilities of the Non-Volatile Memory (NVM) as a storage element in your silicon integrated logic circuits, and as a trimming sector in your high voltage driver and other silicon integrated analog circuits? Would you like to learn how to embed the NVM into your silicon integrated circuit products to improve their performance?This book is written to help you.It provides comprehensive instructions on fabricating the NVM using the same processes you are using to fabricate your logic integrated circuits. We at our eMemory company call this technology the embedded Logic NVM. Because embedded Logic NVM has simple fabrication processes, it has replaced the conventional NVM in many traditional and new applications, including LCD driver, LED driver, MEMS controller, touch panel controller, power management unit, ambient and motion sensor controller, micro controller unit (MCU), security ID setting tag, RFID, NFC, PC camera controller, keyboard controller, and mouse controller. The recent explosive growth of the Logic NVM indicates that it will soon dominate all NVM applications. The embedded Logic NVM was invented and has been implemented in users' applications by the 200+ employees of our eMemory company, who are also the authors and author-assistants of this book.This book covers the following Logic NVM products: One Time Programmable (OTP) memory, Multiple Times Programmable (MTP) memory, Flash memory, and Electrically Erasable Programmable Read Only Memory (EEPROM). The fundamentals of the NVM are described in this book, which include: the physics and operations of the memory transistors, the basic building block of the memory cells and the access circuits.All of these products have been used continuously by the industry worldwide. In-depth readers can attain expert proficiency in the implementation of the embedded Logic NVM technology in their products.

VLSI-Design of Non-Volatile Memories

VLSI-Design of Non-Volatile Memories PDF

Author: Giovanni Campardo

Publisher: Springer Science & Business Media

Published: 2005-01-18

Total Pages: 616

ISBN-13: 9783540201984

DOWNLOAD EBOOK →

VLSI-Design for Non-Volatile Memories is intended for electrical engineers and graduate students who want to enter into the integrated circuit design world. Non-volatile memories are treated as an example to explain general design concepts. Practical illustrative examples of non-volatile memories, including flash types, are showcased to give insightful examples of the discussed design approaches. A collection of photos is included to make the reader familiar with silicon aspects. Throughout all parts of this book, the authors have taken a practical and applications-driven point of view, providing a comprehensive and easily understood approach to all the concepts discussed. Giovanni Campardo and Rino Micheloni have a solid track record of leading design activities at the STMicroelectronics Flash Division. David Novosel is President and founder of Intelligent Micro Design, Inc., Pittsburg, PA.

Non-volatile Memories

Non-volatile Memories PDF

Author: Pierre-Camille Lacaze

Publisher: John Wiley & Sons

Published: 2014-12-02

Total Pages: 308

ISBN-13: 111879012X

DOWNLOAD EBOOK →

Written for scientists, researchers, and engineers, Non-volatile Memories describes the recent research and implementations in relation to the design of a new generation of non-volatile electronic memories. The objective is to replace existing memories (DRAM, SRAM, EEPROM, Flash, etc.) with a universal memory model likely to reach better performances than the current types of memory: extremely high commutation speeds, high implantation densities and retention time of information of about ten years.

Non-volatile Memories

Non-volatile Memories PDF

Author: Pierre-Camille Lacaze

Publisher: John Wiley & Sons

Published: 2014-12-01

Total Pages: 286

ISBN-13: 1118790286

DOWNLOAD EBOOK →

Written for scientists, researchers, and engineers, Non-volatile Memories describes the recent research and implementations in relation to the design of a new generation of non-volatile electronic memories. The objective is to replace existing memories (DRAM, SRAM, EEPROM, Flash, etc.) with a universal memory model likely to reach better performances than the current types of memory: extremely high commutation speeds, high implantation densities and retention time of information of about ten years.

Characterization and Modeling of Advanced Charge Trapping Non Volatile Memories

Characterization and Modeling of Advanced Charge Trapping Non Volatile Memories PDF

Author: Vincenzo Della marca

Publisher:

Published: 2013

Total Pages: 162

ISBN-13:

DOWNLOAD EBOOK →

The silicon nanocrystal memories are one of the most attractive solutions to replace the Flash floating gate for nonvolatile memory embedded applications, especially for their high compatibility with CMOS process and the lower manufacturing cost. Moreover, the nanocrystal size guarantees a weak device-to-device coupling in an array configuration and, in addition, for this technology it has been shown the robustness against SILC. One of the main challenges for embedded memories in portable and contactless applications is to improve the energy consumption in order to reduce the design constraints. Today the application request is to use the Flash memories with both low voltage biases and fast programming operation. In this study, we present the state of the art of Flash floating gate memory cell and silicon nanocrystal memories. Concerning this latter device, we studied the effect of main technological parameters in order to optimize the cell performance. The aim was to achieve a satisfactory programming window for low energy applications. Furthermore, the silicon nanocrystal cell reliability has been investigated. We present for the first time a silicon nanocrystal memory cell with a good functioning after one million write/erase cycles, working on a wide range of temperature [-40°C; 150°C]. Moreover, ten years data retention at 150°C is extrapolated. Finally, the analysis concerning the current and energy consumption during the programming operation shows the opportunity to use the silicon nanocrystal cell for low power applications. All the experimental data have been compared with the results achieved on Flash floating gate memory, to show the performance improvement.

Lanterna Rally - Theme by Grace Themes