Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 9

Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 9 PDF

Author: Ram Ekwal Sah

Publisher: The Electrochemical Society

Published: 2007

Total Pages: 863

ISBN-13: 1566775523

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This issue of ECS Transactions contains the papers presented in the symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectics held May 6-11, 2007 in Chicago. Papers were presented on deposition, characterization and applications of the dielectrics including high- and low-k dielectrics, as well as interface states, device characterization, reliabiliy and modeling.

Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10

Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10 PDF

Author: R. Ekwal Sah

Publisher: The Electrochemical Society

Published: 2009

Total Pages: 871

ISBN-13: 1566777100

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The issue of ECS Transactions contains papers presented at the Tenth International Symposium on Silicon Nitride, Silicon Dioxide, and Alternate Emerging Dielectrics held in San Francisco on May 24-29, 2009. The papers address a very wide range of fabrication and characterization techniques, and applications of thin dielectric films in microelectronic and optoelectronic devices. More specific topics addressed by the papers include reliability, interface states, gate oxides, passivation, and dielctric breakdown.

Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11

Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 PDF

Author: Electrochemical society. Meeting

Publisher: The Electrochemical Society

Published: 2011

Total Pages: 950

ISBN-13: 1566778654

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This issue of ECS Transactions contains the peer-reviewed full length papers of the International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics held May 1-6, 2011 in Montreal as a part of the 219th Meeting of The Electrochemical Society. The papers address a very diverse range of topics. In addition to the deposition and characterization of the dielectrics, more specific topics addressed by the papers include applications, device characterization and reliability, interface states, interface traps, defects, transistor and gate oxide studies, and modeling.

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