SiGe and Ge

SiGe and Ge PDF

Author: David Louis Harame

Publisher: The Electrochemical Society

Published: 2006

Total Pages: 1280

ISBN-13: 1566775078

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The second International SiGe & Ge: Materials, Processing, and Devices Symposium was part of the 2006 ECS conference held in Cancun, Mexico from October 29-Nov 3, 2006. This meeting provided a forum for reviewing and discussing all materials and device related aspects of SiGe & Ge. The hardcover edition includes a bonus CD-ROM containing the PDF of the entire issue.

SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices

SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices PDF

Author: David Harame

Publisher: The Electrochemical Society

Published: 2008

Total Pages: 1136

ISBN-13: 1566776562

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Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds have become a key component of the arsenal in improving semiconductor performance. This issue of ECS Transactions discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.

SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices

SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices PDF

Author: D. Harame

Publisher: The Electrochemical Society

Published: 2010-10

Total Pages: 1066

ISBN-13: 1566778255

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Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds has become a key component in the arsenal in improving semiconductor performance. This symposium discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.

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