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Author: Giuseppe Massabrio
Publisher: McGraw Hill Professional
Published: 1998-12-22
Total Pages: 500
ISBN-13: 9780071349550
DOWNLOAD EBOOK →Publisher's Note: Products purchased from Third Party sellers are not guaranteed by the publisher for quality, authenticity, or access to any online entitlements included with the product.
Author: Christopher M. Snowden
Publisher: World Scientific
Published: 1998
Total Pages: 242
ISBN-13: 9789810236939
DOWNLOAD EBOOK →This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Author: Roy Leventhal
Publisher: Springer Science & Business Media
Published: 2007-01-10
Total Pages: 769
ISBN-13: 0387241604
DOWNLOAD EBOOK →Discusses process variation, model accuracy, design flow and many other practical engineering, reliability and manufacturing issues Gives a good overview for a person who is not an expert in modeling and simulation, enabling them to extract the necessary information to competently use modeling and simulation programs Written for engineering students and product design engineers
Author: Xavier Marie
Publisher: Springer Science & Business Media
Published: 2012-06-26
Total Pages: 267
ISBN-13: 3642275125
DOWNLOAD EBOOK →This book describes the key theoretical techniques for semiconductor research to quantitatively calculate and simulate the properties. It presents particular techniques to study novel semiconductor materials, such as 2D heterostructures, quantum wires, quantum dots and nitrogen containing III-V alloys. The book is aimed primarily at newcomers working in the field of semiconductor physics to give guidance in theory and experiment. The theoretical techniques for electronic and optoelectronic devices are explained in detail.
Author: Kevin M. Kramer
Publisher: Prentice Hall
Published: 1997
Total Pages: 746
ISBN-13:
DOWNLOAD EBOOK →CD-ROM contains: "Win32 version of SGFramework and the simulations contains in the book."
Author: J.S. Yuan
Publisher: Springer Science & Business Media
Published: 1998-05-31
Total Pages: 352
ISBN-13: 9780306457241
DOWNLOAD EBOOK →The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-scaled-integrated (ULSI) technology has moved device dimension into the sub-quarter-micron regime and put more than 10 million transistors on a single chip. While traditional closed-form analytical models furnish useful intuition into how semiconductor devices behave, they no longer provide consistently accurate results for all modes of operation of these very small devices. The reason is that, in such devices, various physical mechanisms affect the device performance in a complex manner, and the conventional assumptions (i. e. , one-dimensional treatment, low-level injection, quasi-static approximation, etc. ) em ployed in developing analytical models become questionable. Thus, the use of numerical device simulation becomes important in device modeling. Researchers and engineers will rely even more on device simulation for device design and analysis in the future. This book provides comprehensive coverage of device simulation and analysis for various modem semiconductor devices. It will serve as a reference for researchers, engineers, and students who require in-depth, up-to-date information and understanding of semiconductor device physics and characteristics. The materials of the book are limited to conventional and mainstream semiconductor devices; photonic devices such as light emitting and laser diodes are not included, nor does the book cover device modeling, device fabrication, and circuit applications.
Author: Madhavan Swaminathan
Publisher: Pearson Education
Published: 2007-11-19
Total Pages: 597
ISBN-13: 0132797178
DOWNLOAD EBOOK →The First Comprehensive, Example-Rich Guide to Power Integrity Modeling Professionals such as signal integrity engineers, package designers, and system architects need to thoroughly understand signal and power integrity issues in order to successfully design packages and boards for high speed systems. Now, for the first time, there's a complete guide to power integrity modeling: everything you need to know, from the basics through the state of the art. Using realistic case studies and downloadable software examples, two leading experts demonstrate today's best techniques for designing and modeling interconnects to efficiently distribute power and minimize noise. The authors carefully introduce the core concepts of power distribution design, systematically present and compare leading techniques for modeling noise, and link these techniques to specific applications. Their many examples range from the simplest (using analytical equations to compute power supply noise) through complex system-level applications. The authors Introduce power delivery network components, analysis, high-frequency measurement, and modeling requirements Thoroughly explain modeling of power/ground planes, including plane behavior, lumped modeling, distributed circuit-based approaches, and much more Offer in-depth coverage of simultaneous switching noise, including modeling for return currents using time- and frequency-domain analysis Introduce several leading time-domain simulation methods, such as macromodeling, and discuss their advantages and disadvantages Present the application of the modeling methods on several advanced case studies that include high-speed servers, high-speed differential signaling, chip package analysis, materials characterization, embedded decoupling capacitors, and electromagnetic bandgap structures This book's system-level focus and practical examples will make it indispensable for every student and professional concerned with power integrity, including electrical engineers, system designers, signal integrity engineers, and materials scientists. It will also be valuable to developers building software that helps to analyze high-speed systems.
Author: Christopher M. Snowden
Publisher: Springer Science & Business Media
Published: 2012-12-06
Total Pages: 267
ISBN-13: 1447110331
DOWNLOAD EBOOK →Semiconductor device modelling has developed in recent years from being solely the domain of device physicists to span broader technological disciplines involved in device and electronic circuit design and develop ment. The rapid emergence of very high speed, high density integrated circuit technology and the drive towards high speed communications has meant that extremely small-scale device structures are used in contempor ary designs. The characterisation and analysis of these devices can no longer be satisfied by electrical measurements alone. Traditional equivalent circuit models and closed-form analytical models cannot always provide consis tently accurate results for all modes of operation of these very small devices. Furthermore, the highly competitive nature of the semiconductor industry has led to the need to minimise development costs and lead-time associated with introducing new designs. This has meant that there has been a greater demand for models capable of increasing our understanding of how these devices operate and capable of predicting accurate quantitative results. The desire to move towards computer aided design and expert systems has reinforced the need for models capable of representing device operation under DC, small-signal, large-signal and high frequency operation. It is also desirable to relate the physical structure of the device to the electrical performance. This demand for better models has led to the introduction of improved equivalent circuit models and a upsurge in interest in using physical models.
Author: Fabrizio Bonani
Publisher: Springer Science & Business Media
Published: 2013-03-09
Total Pages: 241
ISBN-13: 3662045303
DOWNLOAD EBOOK →Provides an overview of the physical basis of noise in semiconductor devices, and a detailed treatment of numerical noise simulation in small-signal conditions. It presents innovative developments in the noise simulation of semiconductor devices operating in large-signal quasi-periodic conditions.
Author: S. Selberherr
Publisher: Springer Science & Business Media
Published: 2012-12-06
Total Pages: 308
ISBN-13: 3709187524
DOWNLOAD EBOOK →The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices.
