Plasma Etching

Plasma Etching PDF

Author: M. Sugawara

Publisher: OUP Oxford

Published: 1998-05-28

Total Pages: 362

ISBN-13: 0191590290

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The focus of this book is the remarkable advances in understanding of low pressure RF (radio frequency) glow discharges. A basic analytical theory and plasma physics are explained. Plasma diagnostics are also covered before the practicalities of etcher use are explored.

Dry Etching Technology for Semiconductors

Dry Etching Technology for Semiconductors PDF

Author: Kazuo Nojiri

Publisher: Springer

Published: 2014-10-25

Total Pages: 126

ISBN-13: 3319102958

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This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits. The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes. The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning etc.

Handbook of Advanced Plasma Processing Techniques

Handbook of Advanced Plasma Processing Techniques PDF

Author: R.J. Shul

Publisher: Springer Science & Business Media

Published: 2011-06-28

Total Pages: 664

ISBN-13: 3642569897

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Pattern transfer by dry etching and plasma-enhanced chemical vapor de position are two of the cornerstone techniques for modern integrated cir cuit fabrication. The success of these methods has also sparked interest in their application to other techniques, such as surface-micromachined sen sors, read/write heads for data storage and magnetic random access memory (MRAM). The extremely complex chemistry and physics of plasmas and their interactions with the exposed surfaces of semiconductors and other materi als is often overlooked at the manufacturing stage. In this case, the process is optimized by an informed "trial-and-error" approach which relies heavily on design-of-experiment techniques and the intuition of the process engineer. The need for regular cleaning of plasma reactors to remove built-up reaction or precursor gas products adds an extra degree of complexity because the interaction of the reactive species in the plasma with the reactor walls can also have a strong effect on the number of these species available for etching or deposition. Since the microelectronics industry depends on having high process yields at each step of the fabrication process, it is imperative that a full understanding of plasma etching and deposition techniques be achieved.

Dry Etching for VLSI

Dry Etching for VLSI PDF

Author: A.J. van Roosmalen

Publisher: Springer Science & Business Media

Published: 2013-06-29

Total Pages: 247

ISBN-13: 148992566X

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This book has been written as part of a series of scientific books being published by Plenum Press. The scope of the series is to review a chosen topic in each volume. To supplement this information, the abstracts to the most important references cited in the text are reprinted, thus allowing the reader to find in-depth material without having to refer to many additional publications. This volume is dedicated to the field of dry (plasma) etching, as applied in silicon semiconductor processing. Although a number of books have appeared dealing with this area of physics and chemistry, these all deal with parts of the field. This book is unique in that it gives a compact, yet complete, in-depth overview of fundamentals, systems, processes, tools, and applications of etching with gas plasmas for VLSI. Examples are given throughout the fundamental sections, in order to give the reader a better insight in the meaning and magnitude of the many parameters relevant to dry etching. Electrical engineering concepts are emphasized to explain the pros and cons of reactor concepts and excitation frequency ranges. In the description of practical applications, extensive use is made of cross-referencing between processes and materials, as well as theory and practice. It is thus intended to provide a total model for understanding dry etching. The book has been written such that no previous knowledge of the subject is required. It is intended as a review of all aspects of dry etching for silicon semiconductor processing.

Semiconductor IC Plasma Dry Etching Process

Semiconductor IC Plasma Dry Etching Process PDF

Author: Kung Linliu

Publisher: Independently Published

Published: 2020-02-11

Total Pages: 57

ISBN-13:

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Semiconductor market value of 2018 was around 468.8 billion US dollars. It is increased for about 13.7% than year 2017. For 2019, it is estimated decrease about 10% to 13% which is 422 to 408 billion US dollars.This market is in a way winner takes all, for example, TSMC (Taiwan Semiconductor Manufacturing Company) which is the world leading semiconductor foundry company has more than 50% market share. Intel has more than 90% market share of personal computer CPU (Central Process Unit) for many years. However, the semiconductor IC process technology sometimes might change the rule of market. Just recently, AMD (Advanced Micro Devices, Inc.) has more than 17% market share of personal computer CPU because they use foundry of TSMC with 7nm EUV technology node (Extreme Ultraviolet, its wavelength is 13.5 nm, shorter wavelength has better critical dimension (CD) resolution for IC process).For the present time, there are four leading semiconductor companies in the world with EUV technology process node which are as follows: (1)Samsung: the world leading semiconductor IC process company for commodity IC such as DRAM、Flash memory and IC for cell phone. The world leading company in cell phone market share, Samsung has highest volume unit of mobile phone which is 75.1 million unit representing 23% of world market share. Samsung also is the leading company in OLED (organic light emitting diode) process technology and display panel which is more than 90% of world market share.(2)Intel: is the world leading company in personal computer CPU which has more than 90% market share of personal computer CPU (Central Process Unit) for many years. Intel is actually a world leading semiconductor IC technology in DRAM (many years ago) and Flash (at the present time) memory.(3)TSMC: TSMC is brief of Taiwan Semiconductor Manufacturing Company which is the world leading semiconductor foundry company has more than 50% market share. The author worked there for a few years as an R & D manager many years ago.(4)Micron: a world leading in DRAM and Flash memory IC.

Glow Discharge Processes

Glow Discharge Processes PDF

Author: Brian Chapman

Publisher: Wiley-Interscience

Published: 1980

Total Pages: 434

ISBN-13:

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Develops detailed understanding of the deposition and etching of materials by sputtering discharge, and of etching of materials by chemically active discharge. Treats glow discharge at several levels from basic phenomena to industrial applications--practical techniques diligently related to fundamentals. Subjects range from voltage, distributions encountered in plasma etching systems to plasma-electron interactions that contribute to sustaining the discharge.

Plasma Etching Processes for CMOS Devices Realization

Plasma Etching Processes for CMOS Devices Realization PDF

Author: Nicolas Posseme

Publisher: Elsevier

Published: 2017-01-25

Total Pages: 136

ISBN-13: 0081011962

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Plasma etching has long enabled the perpetuation of Moore's Law. Today, etch compensation helps to create devices that are smaller than 20 nm. But, with the constant downscaling in device dimensions and the emergence of complex 3D structures (like FinFet, Nanowire and stacked nanowire at longer term) and sub 20 nm devices, plasma etching requirements have become more and more stringent. Now more than ever, plasma etch technology is used to push the limits of semiconductor device fabrication into the nanoelectronics age. This will require improvement in plasma technology (plasma sources, chamber design, etc.), new chemistries (etch gases, flows, interactions with substrates, etc.) as well as a compatibility with new patterning techniques such as multiple patterning, EUV lithography, Direct Self Assembly, ebeam lithography or nanoimprint lithography. This book presents these etch challenges and associated solutions encountered throughout the years for transistor realization. Helps readers discover the master technology used to pattern complex structures involving various materials Explores the capabilities of cold plasmas to generate well controlled etched profiles and high etch selectivities between materials Teaches users how etch compensation helps to create devices that are smaller than 20 nm