Negative Capacitance Field Effect Transistors

Negative Capacitance Field Effect Transistors PDF

Author: Young Suh Song

Publisher: CRC Press

Published: 2023-10-31

Total Pages: 149

ISBN-13: 1000933326

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This book aims to provide information in the ever-growing field of low-power electronic devices and their applications in portable devices, wireless communication, sensor, and circuit domains. Negative Capacitance Field Effect Transistors: Physics, Design, Modeling and Applications discusses low-power semiconductor technology and addresses state-of-the-art techniques such as negative capacitance field effect transistors and tunnel field effect transistors. The book is split into three parts. The first part discusses the foundations of low-power electronics, including the challenges and demands and concepts such as subthreshold swing. The second part discusses the basic operations of negative capacitance field effect transistors (NCFETs) and tunnel field effect transistors (TFETs). The third part covers industrial applications including cryogenics and biosensors with NC-FET. This book is designed to be a one-stop guide for students and academic researchers, to understand recent trends in the IT industry and semiconductor industry. It will also be of interest to researchers in the field of nanodevices such as NC-FET, FinFET, tunnel FET, and device–circuit codesign.

Negative Capacitance Field Effect Transistors

Negative Capacitance Field Effect Transistors PDF

Author: Young Suh Song

Publisher:

Published: 2023-08

Total Pages: 0

ISBN-13: 9781032446844

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This book aims to provide information in the ever-growing field of low-power electronic devices and their applications in portable device, wireless communication, sensor, and circuit domains. . Negative Capacitance Field Effect Transistor: Physics, Design, Modeling and Applications, discusses low-power semiconductor technology and addresses state-of-art techniques such as negative-capacitance field-effect transistors and tunnel field-effect transistors. The book is broken up into four parts. Part one discusses foundations of low-power electronics including the challenges and demands and concepts like subthreshold swing. Part two discusses the basic operations of negative-capacitance field-effect transistor (NC-FET) and Tunnel Field-effect Transistor (TFET). Part three covers industrial applications including cryogenics and biosensors with NC-FET. This book is designed to be one-stop guidebook for students and academic researchers, to understand recent trends in the IT industry and semiconductor industry. It will also be of interest to researchers in the field of nanodevices like NC-FET, FinFET, Tunnel FET, and device-circuit codesign.

A Journey of Embedded and Cyber-Physical Systems

A Journey of Embedded and Cyber-Physical Systems PDF

Author: Jian-Jia Chen

Publisher: Springer Nature

Published: 2020-07-30

Total Pages: 181

ISBN-13: 3030474879

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This Open Access book celebrates Professor Peter Marwedel's outstanding achievements in compilers, embedded systems, and cyber-physical systems. The contributions in the book summarize the content of invited lectures given at the workshop “Embedded Systems” held at the Technical University Dortmund in early July 2019 in honor of Professor Marwedel's seventieth birthday. Provides a comprehensive view from leading researchers with respect to the past, present, and future of the design of embedded and cyber-physical systems; Discusses challenges and (potential) solutions from theoreticians and practitioners on modeling, design, analysis, and optimization for embedded and cyber-physical systems; Includes coverage of model verification, communication, software runtime systems, operating systems and real-time computing.

Negative Capacitance Field Effect Transistors

Negative Capacitance Field Effect Transistors PDF

Author: Young Suh Song

Publisher: CRC Press

Published: 2023-10-31

Total Pages: 167

ISBN-13: 1000933334

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This book aims to provide information in the ever-growing field of low-power electronic devices and their applications in portable devices, wireless communication, sensor, and circuit domains. Negative Capacitance Field Effect Transistors: Physics, Design, Modeling and Applications discusses low-power semiconductor technology and addresses state-of-the-art techniques such as negative capacitance field effect transistors and tunnel field effect transistors. The book is split into three parts. The first part discusses the foundations of low-power electronics, including the challenges and demands and concepts such as subthreshold swing. The second part discusses the basic operations of negative capacitance field effect transistors (NCFETs) and tunnel field effect transistors (TFETs). The third part covers industrial applications including cryogenics and biosensors with NC-FET. This book is designed to be a one-stop guide for students and academic researchers, to understand recent trends in the IT industry and semiconductor industry. It will also be of interest to researchers in the field of nanodevices such as NC-FET, FinFET, tunnel FET, and device–circuit codesign.

Ferroelectric Field Effect Transistors

Ferroelectric Field Effect Transistors PDF

Author: Victoria Chen

Publisher:

Published: 2016

Total Pages:

ISBN-13:

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In recent years, there has been an increasing number of issues associated with the continued Metal Oxide Semiconductor Field Effect Transistor (MOSFET) scaling. As feature lengths shrink down to atomic sizes, problems with power consumption, heat dissipation, and quantum effects become more prevalent. The unique properties of ferroelectric materials and their ability to display a negative differential capacitance make them a promising candidate for the use in future transistor technology, and a potential successor to traditional silicon CMOS devices. By placing a ferroelectric material layer in place of the dielectric layer of a MOSFET, it is possible to achieve a subthreshold slope lower than the typical 60 mV/dec limit. This device is called a ferroelectric field effect transistor (FerroFET). In this work, we develop a computational model based on the Landau-Devonshire theory to extract Landau coefficients from polarization-voltage data of a ferroelectric capacitor and simulate the current-voltage behavior of a FerroFET. We computationally demonstrate the gains of FerroFETs over conventional CMOS devices and explore properties of various ferroelectric materials. These FerroFETs have great potential for use in low power applications and could greatly revolutionize the current semiconductor industry.

Digital Logic Design Based on Negative Capacitance Field Effect Transistors

Digital Logic Design Based on Negative Capacitance Field Effect Transistors PDF

Author: Mark Steiner

Publisher:

Published: 2016

Total Pages:

ISBN-13:

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This thesis explores the circuit implications of ferroelectric transistors with a focus on the effects of ferroelectric material thickness. Ferroelectric transistors have a thin layer of ferroelectric material deposited on the gate of the device. This material causes the behavior of the device to change due to its negative capacitance. While there are many variables which contribute to this effect, with all other variables fixed, the material thickness can be used to explore some of the actions of the ferroelectric transistors.This thesis shows transistor characteristics of the ferroelectric transistors mapped with respect to the ferroelectric material thickness. A ring oscillator is also used to explore the energy and delay of the ferroelectric transistors. Also, 6T SRAM cells are explored with respect to ferroelectric transistors to understand the implications of their use within SRAM cells. Ferroelectric transistors are found to be useful in low power systems to mitigate some of the issues that traditional MOSFETs encounter when in the same setting.

Compact Modeling

Compact Modeling PDF

Author: Gennady Gildenblat

Publisher: Springer Science & Business Media

Published: 2010-06-22

Total Pages: 531

ISBN-13: 9048186145

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Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.

Ferroelectricity in Doped Hafnium Oxide

Ferroelectricity in Doped Hafnium Oxide PDF

Author: Uwe Schroeder

Publisher: Woodhead Publishing

Published: 2019-03-27

Total Pages: 570

ISBN-13: 0081024312

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Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face

Junctionless Field-Effect Transistors

Junctionless Field-Effect Transistors PDF

Author: Shubham Sahay

Publisher: John Wiley & Sons

Published: 2019-02-27

Total Pages: 496

ISBN-13: 1119523532

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A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.

Miniaturized Transistors

Miniaturized Transistors PDF

Author: Lado Filipovic

Publisher: MDPI

Published: 2019-06-24

Total Pages: 202

ISBN-13: 3039210106

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What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design makeovers; from planar transistors of ten years ago, technological advancements have accelerated to today's FinFETs, which hardly resemble their bulky ancestors. FinFETs could potentially take us to the 5-nm node, but what comes after it? From gate-all-around devices to single electron transistors and two-dimensional semiconductors, a torrent of research is being carried out in order to design the next transistor generation, engineer the optimal materials, improve the fabrication technology, and properly model future devices. We invite insight from investigators and scientists in the field to showcase their work in this Special Issue with research papers, short communications, and review articles that focus on trends in micro- and nanotechnology from fundamental research to applications.

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