Magnetic Materials, Structures and Processing for Information Storage:

Magnetic Materials, Structures and Processing for Information Storage: PDF

Author: Brian J. Daniels

Publisher: Cambridge University Press

Published: 2014-06-05

Total Pages: 194

ISBN-13: 9781107413139

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The exponential growth in information technologies has resulted in an explosion in the need for data storage with increased speed and reliability. These requirements have caused rapid development of complex magnetic materials and structures. The rate of technology development has led to a situation where the performance envelope of new materials is not fully known until the materials are fabricated into devices. In response to this, the focus of this book, first published in 2001, is not only on magnetic materials, but also on techniques and technology associated with device fabrication. The work presented in this book effectively spans the range of the myriad of information storage research from concept to product. Topics include: patterned magnetic recording media; characterization of magnetic thin films and structures; magnetic tunnel junctions and spin-dependent transport; GMR and spin valves; media/GMR/CMR; writer materials and characteristics; and magnetic structure processing techniques.

The Granular State: Volume 627

The Granular State: Volume 627 PDF

Author: Surajit Sen

Publisher:

Published: 2001-04-09

Total Pages: 338

ISBN-13:

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These 38 papers from the April 2000 symposium study granular structure, granular flows, nonlinear waves in granular media, vibrated and rotated granular media, and stress distributions. Topics include jamming in liquids and granular materials, nuclear magnetic resonance studies of granular flows, the blueprint of a concept for a nozzle- free inkjet printer, mixing and segregation processes in a Turbula blender, persistence of granular structure during die compaction of ceramic powders, and humidity-induced cohesion effects in granular media. c. Book News Inc.

Wide-Bandgap Electronic Devices: Volume 622

Wide-Bandgap Electronic Devices: Volume 622 PDF

Author: R. J. Shul

Publisher:

Published: 2001-04-09

Total Pages: 578

ISBN-13:

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Interest in wide-bandgap semiconductors for high-power/high-temperature electronics remains prominent. For such applications, SiC is by far the most mature semiconductor material. GaN and diamond, however, have also become prime candidates. While diamond has several advantages over the other two materials, producing large single crystals, as well as the inability to achieve n-type doping, have limited device fabrication. For GaN, recent advances in crystal growth and processing capabilities, as well as excellent transport properties, have yielded a great deal of device development, yet thermal conduction remains an issue. SiC has excellent thermal conductivity, high-breakdown voltages, and well-developed substrates and processing techniques. This book deals with a wide range of technical activity in the area of wide-bandgap high-power/high-temperature electronic devices and covers topics including the fabrication and performance of GaN-based and SiC-based devices, as well as issues related to growth, characterization, and processing of wide-bandgap materials. Several summaries of the current status of the field are provided.

Si Front End Processing - Physics and Technology II of Dopant-Defect Interactions II: Volume 610

Si Front End Processing - Physics and Technology II of Dopant-Defect Interactions II: Volume 610 PDF

Author: Aditya Agarwal

Publisher:

Published: 2001-04-09

Total Pages: 448

ISBN-13:

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This proceedings of the April 2000 symposium deals with formation of electrical junctions in the front-end processing of devices for the approaching end-of-the-roadmap. The 60 papers address 2D dopant characterization, ion implantation and shallow junction technology, group III diffusion and activation, carbon diffusion and activation, group V diffusion and activation, vacancy-type defects, regrown amorphous layers, and structure and properties of point and extended defects. Topics include ultra-shallow junction formation and gate activation in deep-submicron CMOS, low energy implantation of boron with decaborane ions, modeling ramp rate effects on shallow junction formation, clustering equilibrium and deactivation kinetics in As doped silicon, and atomistic modeling of complex silicon processing scenarios. c. Book News Inc.

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