Author: Feng Zhe Chuan
Publisher: World Scientific
Published: 2017-04-20
Total Pages: 424
ISBN-13: 1786343207
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Group III-Nitrides semiconductor materials, including GaN, InN, AlN, InGaN, AlGaN and AlInGaN, i.e. (Al, In, Ga)N, are excellent semiconductors, covering the spectral range from deep ultraviolet (DUV) to UV, visible and infrared, with unique properties very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved in recent years for research and development (R&D) in these materials and devices, such as high-power and high brightness UV-blue-green-white light emitting diodes (LEDs), UV-blue-green laser diodes (LDs), photo-detectors and various optoelectronics and electronics devices and applications. The Nobel Prize in Physics 2014 was awarded jointly to Isamu Akasaki, Hiroshi Amano and Shuji Nakamura "for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources". Red and green diodes had been invented since 1960s-70s but without blue LED. Despite considerable efforts, the blue LED had remained a challenge for a long time. The success and inventions on GaN-based LEDs were revolutionary and benefiting for mankind. III-Nitrides-based industry has formed and acquired rapid developments over the world. Incandescent light bulbs lit the 20th century and the 21st century will be lit by LED lamps. Before this book, the editor has edited two books, III-Nitride Semiconductor Materials (2006) and III-Nitride Devices and Nanoengineering (2008), both published by ICP/WSP, in the fields of III-Nitride. The developments of these materials and devices are moving rapidly. Many data or knowledge, some even just published only recently, have been modified and needed to be upgraded. This new book, III-Nitride Materials, Devices and Nano-Structures as the third instalment, will cover the rapid new developments and achievements in the III-Nitride fields, particularly those made since 2009. Contents:General:Comprehensive Theoretical and Experimental Studies on III-Nitrides, Doping, Nano-Structures and LEDs (Jinmin Li, Zhiqiang Liu, Xiaoyan Yi and Junxi Wang)Waste Energy Harvesting Using III-Nitride Materials (E Ghafari, E Witkoske, Y Liu, C Zhang, X Jiang, A Bukowski, B Kucukgok, M Lundstrom; I T Ferguson and N Lu)III-Nitride Nanostructures for Intersubband Optoelectronics (C B Lim, A Ajay, J Lähnemann, D A Browne and E Monroy)GaN-Based Photodetectors (Ke Jiang, Xiaojuan Sun, Hang Song and Dabing Li)III-Nitride Materials:Single Crystal AlN: Growth by Modified Physical Vapor Transport and Properties (Honglei Wu and Ruisheng Zheng)Towards Understanding and Control of Nanoscale Phase Segregation in Indium-Gallium-Nitride Alloys (Yohannes Abate, Viktoriia E Babicheva, Vladislav S Yakovlev and Nikolaus Dietz)Investigating Structural and Optical Characteritics of III-Nitride Semiconductor Materials (Yi Liang, Xiaodong Jiang, Devki N Talwar, Liangyu Wan, Gu Xu and Zhe Chuan Feng)III-Nitride Devices and Nano-Structures:III-Nitride Nano-Structures and Improving the Luminescence Efficiency for Quantum Well LEDs (Peng Chen)Fabrication and Characterization of Green Resonant-Cavity Light-Emitting Diodes Prepared by Wafer Transfer Technologies (Shih-Yung Huang and Ray-Hua Horng)Nanotexturing Effects in GaN/InGaN Multi-Quantum-Wells LED Planar Structures (S J Xu)Group III-Nitride Nanostructures for Light-Emitting Devices and Beyond (Je-Hyung Kim, Young-Ho Ko and Yong-Hoon Cho) Readership: Scientists; material growers and evaluators; device design, processing engineers; postgraduate and graduate students in electrical & electronic engineering and materials engineering.
