Ferroelectricity in Doped Hafnium Oxide

Ferroelectricity in Doped Hafnium Oxide PDF

Author: Uwe Schroeder

Publisher: Woodhead Publishing

Published: 2019-03-27

Total Pages: 570

ISBN-13: 0081024312

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Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face

Ferroelectricity in Doped Hafnium Oxide

Ferroelectricity in Doped Hafnium Oxide PDF

Author: Uwe Schroeder

Publisher: Woodhead Publishing

Published: 2019-03-29

Total Pages: 0

ISBN-13: 9780081024300

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Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized.

Ferroelectric-Gate Field Effect Transistor Memories

Ferroelectric-Gate Field Effect Transistor Memories PDF

Author: Byung-Eun Park

Publisher: Springer Nature

Published: 2020-03-23

Total Pages: 421

ISBN-13: 9811512124

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This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.

Ferroelectric Thin Films

Ferroelectric Thin Films PDF

Author: Masanori Okuyama

Publisher: Springer Science & Business Media

Published: 2005-02-22

Total Pages: 272

ISBN-13: 9783540241638

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Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. The contributing authors are acknowledged experts in the field.

Pulsed Laser Deposition of Thin Films

Pulsed Laser Deposition of Thin Films PDF

Author: Robert Eason

Publisher: John Wiley & Sons

Published: 2007-12-14

Total Pages: 754

ISBN-13: 0470052112

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Edited by major contributors to the field, this text summarizes current or newly emerging pulsed laser deposition application areas. It spans the field of optical devices, electronic materials, sensors and actuators, biomaterials, and organic polymers. Every scientist, technologist and development engineer who has a need to grow and pattern, to apply and use thin film materials will regard this book as a must-have resource.

Formation of Ferroelectricity in Hafnium Oxide Based Thin Films

Formation of Ferroelectricity in Hafnium Oxide Based Thin Films PDF

Author: Tony Schenk

Publisher: BoD – Books on Demand

Published: 2017-03-15

Total Pages: 194

ISBN-13: 3743127296

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In 2011, Böscke et al. reported the unexpected discovery of ferroelectric properties in hafnia based thin films, which has since initiated many further studies and revitalized research on the topic of ferroelectric memories. In spite of many efforts, the unveiling of the fundamentals behind this surprising discovery has proven rather challenging. In this work, the originally claimed Pca21 phase is experimentally proven to be the root of the ferroelectric properties and the nature of this ferroelectricity is classified in the frame of existing concepts of ferroelectric materials. Parameters to stabilize this polar phase are examined from a theoretical and fabrication point of view. With these very basic questions addressed, the application relevant electric field cycling behavior is studied. The results of first-order reversal curves, impedance spectroscopy, scanning transmission electron microscopy and piezoresponse force microscopy significantly advance the understanding of structural mechanisms underlying wake-up, fatigue and the novel phenomenon of split-up/merging of transient current peaks. The impact of field cycling behavior on applications like ferroelectric memories is highlighted and routes to optimize it are derived. These findings help to pave the road for a successful commercialization of hafnia based ferroelectrics.

Physics of Ferroelectrics

Physics of Ferroelectrics PDF

Author: Karin M. Rabe

Publisher: Springer Science & Business Media

Published: 2007-07-20

Total Pages: 395

ISBN-13: 3540345914

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The past two decades have witnessed revolutionary breakthroughs in the understanding of ferroelectric materials, both from the perspective of theory and experiment. This book addresses the paradigmatic shifts in understanding brought about by these breakthroughs, including the consideration of novel fabrication methods and nanoscale applications of these materials, and new theoretical methods such as the effective Hamiltonian approach and density functional theory.

Frontiers in Materials Processing, Applications, Research and Technology

Frontiers in Materials Processing, Applications, Research and Technology PDF

Author: M. Muruganant

Publisher: Springer

Published: 2017-11-13

Total Pages: 401

ISBN-13: 9811048193

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This volume comprises the select proceedings of FiMPART 2015. The volume covers advances in major areas of materials research under one umbrella. This volume covers all aspects of materials research, processing, fabrication, structure/property evaluation, applications of ferrous, non-ferrous, ceramic, polymeric materials and composites including biomaterials, materials for energy, fuel cells/hydrogen storage technologies, batteries, super-capacitors, nano-materials for energy and structural applications, aerospace structural metallic materials, bulk metallic glasses and other advanced materials. The book will be useful to researchers, students, and professional working in areas related to materials innovation and applications.

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