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Crystal Growth Technology

Author: K. Byrappa

Publisher: Springer Science & Business Media

Published: 2003-04-17

Total Pages: 618

ISBN-13: 9783540003670

Crystals are the unacknowledged pillars of modern technology. The modern technological developments depend greatly on the availability of suitable single crystals, whether it is for lasers, semiconductors, magnetic devices, optical devices, superconductors, telecommunication, etc. In spite of great technological advancements in the recent years, we are still in the early stage with respect to the growth of several important crystals such as diamond, silicon carbide, PZT, gallium nitride, and so on. Unless the science of growing these crystals is understood precisely, it is impossible to grow them as large single crystals to be applied in modern industry. This book deals with almost all the modern crystal growth techniques that have been adopted, including appropriate case studies. Since there has been no other book published to cover the subject after the Handbook of Crystal Growth, Eds. DTJ Hurle, published during 1993-1995, this book will fill the existing gap for its readers. The book begins with "Growth Histories of Mineral Crystals" by the most senior expert in this field, Professor Ichiro Sunagawa. The next chapter reviews recent developments in the theory of crystal growth, which is equally important before moving on to actual techniques. After the first two fundamental chapters, the book covers other topics like the recent progress in quartz growth, diamond growth, silicon carbide single crystals, PZT crystals, nonlinear optical crystals, solid state laser crystals, gemstones, high melting oxides like lithium niobates, hydroxyapatite, GaAs by molecular beam epitaxy, superconducting crystals, morphology control, and more. For the first time, the crystal growth modeling has been discussed in detail with reference to PZT and SiC crystals.

Crystal Growth Technology

Author: Hans J. Scheel

Publisher: John Wiley & Sons

Published: 2005-12-13

Total Pages: 694

ISBN-13: 0470871679

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This volume deals with the technologies of crystal fabrication, of crystal machining, and of epilayer production and is the first book on industrial and scientific aspects of crystal and layer production. The major industrial crystals are treated: Si, GaAs, GaP, InP, CdTe, sapphire, oxide and halide scintillator crystals, crystals for optical, piezoelectric and microwave applications and more. Contains 29 contributions from leading crystal technologists covering the following topics: * General aspects of crystal growth technology * Silicon * Compound semiconductors * Oxides and halides * Crystal machining * Epitaxy and layer deposition Scientific and technological problems of production and machining of industrial crystals are discussed by top experts, most of them from the major growth industries and crystal growth centers. In addition, it will be useful for the users of crystals, for teachers and graduate students in materials sciences, in electronic and other functional materials, chemical and metallurgical engineering, micro-and optoelectronics including nanotechnology, mechanical engineering and precision-machining, microtechnology, and in solid-state sciences.

Technology of Gallium Nitride Crystal Growth

Author: Dirk Ehrentraut

Publisher: Springer Science & Business Media

Published: 2010-06-14

Total Pages: 337

ISBN-13: 3642048307

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This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.

Additives and Crystallization Processes

Author: Keshra Sangwal

Publisher: John Wiley & Sons

Published: 2007-09-27

Total Pages: 468

ISBN-13: 9780470517826

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Crystal growth technology involves processes for the production of crystals essential for microelectronics, communication technologies, lasers and energy producing and energy saving technology. A deliberately added impurity is called an additive and in different industries these affect the process of crystal growth. Thus, understanding of interactions between additives and the crystallizing phases is important in different processes found in the lab, nature and in various industries. This book presents a generalized description of the mechanisms of action of additives during nucleation, growth and aggregation of crystals during crystallization and has received endorsement from the President of the International Organization for Crystal Growth. It is the first text devoted to the role of additives in different crystallization processes encountered in the lab, nature and in industries as diverse as pharmaceuticals, food and biofuels. A unique highlight of the book are chapters on the effect of additives on crystal growth processes, since the phenomena discussed is an issue of debate between researchers

Handbook of Crystal Growth

Author: Peter Rudolph

Publisher: Elsevier

Published: 2014-11-04

Total Pages: 1420

ISBN-13: 0444633065

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Vol 2A: Basic TechnologiesHandbook of Crystal Growth, Second Edition Volume IIA (Basic Technologies) presents basic growth technologies and modern crystal cutting methods. Particularly, the methodical fundamentals and development of technology in the field of bulk crystallization on both industrial and research scales are explored. After an introductory chapter on the formation of minerals, ruling historically the basic crystal formation parameters, advanced basic technologies from melt, solution, and vapour being applied for research and production of the today most important materials, like silicon, semiconductor compounds and oxides are presented in detail. The interdisciplinary and general importance of crystal growth for human live are illustrated.Vol 2B: Growth Mechanisms and DynamicsHandbook of Crystal Growth, Second Edition Volume IIB (Growth Mechanisms and Dynamics) deals with characteristic mechanisms and dynamics accompanying each bulk crystal growth method discussed in Volume IIA. Before the atoms or molecules pass over from a position in the fluid medium (gas, melt or solution) to their place in the crystalline face they must be transported in the fluid over macroscopic distances by diffusion, buoyancy-driven convection, surface-tension-driven convection, and forced convection (rotation, acceleration, vibration, magnetic mixing). Further, the heat of fusion and the part carried by the species on their way to the crystal by conductive and convective transport must be dissipated in the solid phase by well-organized thermal conduction and radiation to maintain a stable propagating interface. Additionally, segregation and capillary phenomena play a decisional role for chemical composition and crystal shaping, respectively. Today, the increase of high-quality crystal yield, its size enlargement and reproducibility are imperative conditions to match the strong economy. Volume 2A Presents the status and future of Czochralski and float zone growth of dislocation-free silicon Examines directional solidification of silicon ingots for photovoltaics, vertical gradient freeze of GaAs, CdTe for HF electronics and IR imaging as well as antiferromagnetic compounds and super alloys for turbine blades Focuses on growth of dielectric and conducting oxide crystals for lasers and non-linear optics Topics on hydrothermal, flux and vapour phase growth of III-nitrides, silicon carbide and diamond are explored Volume 2B Explores capillarity control of the crystal shape at the growth from the melt Highlights modeling of heat and mass transport dynamics Discusses control of convective melt processes by magnetic fields and vibration measures Includes imperative information on the segregation phenomenon and validation of compositional homogeneity Examines crystal defect generation mechanisms and their controllability Illustrates proper automation modes for ensuring constant crystal growth process Exhibits fundamentals of solution growth, gel growth of protein crystals, growth of superconductor materials and mass crystallization for food and pharmaceutical industries

Crystal Growth for Beginners

Author: Ivan V. Markov

Publisher: World Scientific

Published: 2003

Total Pages: 566

ISBN-13: 9812382453

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This is the first-ever textbook on the fundamentals of nucleation, crystal growth and epitaxy. It has been written from a unified point of view and is thus a non-eclectic presentation of this interdisciplinary topic in materials science. The reader is required to possess some basic knowledge of mathematics and physics. All formulae and equations are accompanied by examples that are of technological importance. The book presents not only the fundamentals but also the state of the art in the subject. The second revised edition includes two separate chapters dealing with the effect of the Enrich-Schwoebel barrier for down-step diffusion, as well as the effect of surface active species, on the morphology of the growing surfaces. In addition, many other chapters are updated accordingly. Thus, it serves as a valuable reference book for both graduate students and researchers in materials science.

50 Years Progress in Crystal Growth

Author: Robert Feigelson

Publisher: Elsevier

Published: 2004-07-09

Total Pages: 268

ISBN-13: 0080489931

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There is no question that the field of solid state electronics, which essentially began with work at Bell laboratories just after World War II, has had a profound impact on today's Society. What is not nearly so widely known is that advances in the art and science of crystal growth underpin this technology. Single crystals, once valued only for their beauty, are now found, in one form or another in most electronic, optoelectronic and numerous optical devices. These devices, in turn, have permeated almost every home and village throughout the world. In fact it is hard to imagine what our electronics industry, much less our entire civilization, would have been like if crystal growth scientists and engineers were unable to produce the large, defect free crystals required by device designers. This book brings together two sets of related articles describing advances made in crystal growth science and technology since World War II. One set is from the proceedings of a Symposium held in August 2002 to celebrate 50 years of progress in the field of crystal growth. The second contains articles previously published in the newsletter of the American Association for Crystal Growth in a series called "Milestones in Crystal Growth". The first section of this book contains several articles which describe some of the early history of crystal growth prior to the electronics revolution, and upon which modern crystal growth science and technology is based. This is followed by a special article by Prof. Sunagawa which provides some insight into how the successful Japanese crystal growth industry developed. The next section deals with crystal growth fundamentals including concepts of solute distribution, interface kinetics, constitutional supercooling, morphological stability and the growth of dendrites. The following section describes the growth of crystals from melts and solutions, while the final part involves thin film growth by MBE and OMVPE. These articles were written by some of the most famous theorists and crystal growers working in the field. They will provide future research workers with valuable insight into how these pioneering discoveries were made, and show how their own research and future devices will be based upon these developments. · Articles written by some of the most famous theorists and crystal growers working in the field · Valuable insight into how pioneering discoveries were made. · Show how their own research and future devices will be based upon these developments

Crystal Growth

Author: Brian R. Pamplin

Publisher: Elsevier

Published: 2013-09-11

Total Pages: 630

ISBN-13: 1483161463

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Crystal Growth, Second Edition deals with crystal growth methods and the relationships between them. The chemical physics of crystal growth is discussed, along with solid growth techniques such as annealing, sintering, and hot pressing; melt growth techniques such as normal freezing, cooled seed method, crystal pulling, and zone melting; solution growth methods; and vapor phase growth. This book is comprised of 15 chapters and opens with a bibliography of books and source material, highlighted by a classification of crystal growth techniques. The following chapters focus on the molecular state of a crystal when in equilibrium with respect to growth or dissolution; the fundamentals of classical and modern hydrodynamics as applied to crystal growth processes; creation, control, and measurement of the environment in which a crystal with desired properties can grow; and growth processes where transport occurs through the vapor phase. The reader is also introduced to crystal growth with molecular beam epitaxy; crystal pulling as a crystal growth method; and zone refining and its applications. This monograph will be of interest to physicists and crystallographers.

Introduction to Crystal Growth and Characterization

Author: Klaus-Werner Benz

Publisher: John Wiley & Sons

Published: 2014-07-28

Total Pages: 559

ISBN-13: 3527684344

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This new textbook provides for the first time a comprehensive treatment of the basics of contemporary crystallography and crystal growth in a single volume. The reader will be familiarized with the concepts for the description of morphological and structural symmetry of crystals. The architecture of crystal structures of selected inorganic and molecular crystals is illustrated. The main crystallographic databases as data sources of crystal structures are described. Nucleation processes, their kinetics and main growth mechanism will be introduced in fundamentals of crystal growth. Some phase diagrams in the solid and liquid phases in correlation with the segregation of dopants are treated on a macro- and microscale. Fluid dynamic aspects with different types of convection in melts and solutions are discussed. Various growth techniques for semiconducting materials in connection with the use of external field (magnetic fields and microgravity) are described. Crystal characterization as the overall assessment of the grown crystal is treated in detail with respect to - crystal defects - crystal quality - field of application Introduction to Crystal Growth and Characterization is an ideal textbook written in a form readily accessible to undergraduate and graduate students of crystallography, physics, chemistry, materials science and engineering. It is also a valuable resource for all scientists concerned with crystal growth and materials engineering.

Crystal Growth and Evaluation of Silicon for VLSI and ULSI

Author: Golla Eranna

Publisher: CRC Press

Published: 2014-12-08

Total Pages: 432

ISBN-13: 1482232812

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Silicon, as a single-crystal semiconductor, has sparked a revolution in the field of electronics and touched nearly every field of science and technology. Though available abundantly as silica and in various other forms in nature, silicon is difficult to separate from its chemical compounds because of its reactivity. As a solid, silicon is chemically inert and stable, but growing it as a single crystal creates many technological challenges. Crystal Growth and Evaluation of Silicon for VLSI and ULSI is one of the first books to cover the systematic growth of silicon single crystals and the complete evaluation of silicon, from sand to useful wafers for device fabrication. Written for engineers and researchers working in semiconductor fabrication industries, this practical text: Describes different techniques used to grow silicon single crystals Explains how grown single-crystal ingots become a complete silicon wafer for integrated-circuit fabrication Reviews different methods to evaluate silicon wafers to determine suitability for device applications Analyzes silicon wafers in terms of resistivity and impurity concentration mapping Examines the effect of intentional and unintentional impurities Explores the defects found in regular silicon-crystal lattice Discusses silicon wafer preparation for VLSI and ULSI processing Crystal Growth and Evaluation of Silicon for VLSI and ULSI is an essential reference for different approaches to the selection of the basic silicon-containing compound, separation of silicon as metallurgical-grade pure silicon, subsequent purification, single-crystal growth, and defects and evaluation of the deviations within the grown crystals.