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Control of Semiconductor Interfaces

Author: I. Ohdomari

Publisher: Elsevier

Published: 2017-05-03

Total Pages: 600

ISBN-13: 1483290484

This book focuses exclusively on control of interfacial properties and structures for semiconductor device applications from the point of view of improving and developing novel electrical properties. The following topics are covered: metal-semiconductors, semiconductor hetero-interfaces, characterization, semiconducting new materials, insulator-semiconductor, interfaces in device, control of interface formation, control of interface properties, contact metallization. A variety of up-to-date research topics such as atomic layer epitaxy, atomic layer passivation, atomic scale characterization including STM and SR techniques, single ion implementation, self-organization crystal growth, in situ measurements for process control and extremely high-spatial resolution analysis techniques, are also included. Furthermore it bridges the macroscopic, mesoscopic, and atomic-scale regimes of semicondutor interfaces, describing the state of the art in forming, controlling and characterizating unique semiconductor interfaces, which will be of practical importance in advanced devices. Intended for both technologists who require an up-to-date assessment of methods for interface formation, processing and characterization, and solid state researchers who desire the latest developments in understanding the basic mechanisms of interface physics, chemistry and electronics, this book will be a welcome addition to the existing literature.

Energy-Level Control at Hybrid Inorganic/Organic Semiconductor Interfaces

Author: Raphael Schlesinger

Publisher: Springer

Published: 2016-11-21

Total Pages: 211

ISBN-13: 3319466240

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This work investigates the energy-level alignment of hybrid inorganic/organic systems (HIOS) comprising ZnO as the major inorganic semiconductor. In addition to offering essential insights, the thesis demonstrates HIOS energy-level alignment tuning within an unprecedented energy range. (Sub)monolayers of organic molecular donors and acceptors are introduced as an interlayer to modify HIOS interface-energy levels. By studying numerous HIOS with varying properties, the author derives generally valid systematic insights into the fundamental processes at work. In addition to molecular pinning levels, he identifies adsorption-induced band bending and gap-state density of states as playing a crucial role in the interlayer-modified energy-level alignment, thus laying the foundation for rationally controlling HIOS interface electronic properties. The thesis also presents quantitative descriptions of many aspects of the processes, opening the door for innovative HIOS interfaces and for future applications of ZnO in electronic devices.

Control of Semiconductor Surfaces and Interfaces: Volume 448

Author: S. K. Brierley

Publisher: Materials Research Society

Published: 1997-07-15

Total Pages: 0

ISBN-13: 9781558993525

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Semiconductor surfaces and interfaces play a vital role in modern-day electronic devices. This is especially true as device dimensions shrink. The properties of clean surfaces and chemically processed surfaces can also have a significant impact on the properties of subsequently grown layers. These surfaces and interfaces may exhibit modified structural, electronic and optical properties, so it is important to understand their effects on subsequent growth, processing and device fabrication. Topics in the book include: structure of surfaces; control of surface defects and properties through chemical etching and passivation; modification of surfaces for growth and processing; nucleation on semiconductor surfaces and self-assembly; the effects of surfaces and interfaces on subsequent growth; and the properties of semiconductor/dielectric and semiconductor/ metal interfaces. In situ and ex situ monitoring of these properties, using various electrical and optical techniques are also presented.

Metal-semiconductor Interfaces

Author: Akio Hiraki

Publisher: Ios PressInc

Published: 1995

Total Pages: 0

ISBN-13: 9789051992052

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This volume is a collection of papers written by the authors who were selected among the members of a project on ``Metal-Semiconductor Interfaces'' sponsored by the Ministry of Education, Science and Culture of Japan (MON-BUSHO). The M-S Interface is a problem which stems from the 1930's when the concept of surface states was first proposed by Tamm, shortly later by Shockley, and then clearly by Bardeen in 1947 to catalyze the invention of the transistor, and still exists today when one can count almost one billion M-S interfaces or contacts in a Si chip whose size is less than 1 cm square. Consequently, there have been plenty of research activities all over the world, especially over the last 15 years. The ``M-S Interfaces'' project was composed of four research branches to tackle the following subjects to be reported in the book: Theoretical Approaches, Initial Stage of M-S Interface Formation, Interface Structure of M-S Systems, Realization and Control of Contact Characterization, and Novel Characterization Techniques of Buried Interfaces.

Production Planning and Control for Semiconductor Wafer Fabrication Facilities

Author: Lars Mönch

Publisher: Springer Science & Business Media

Published: 2012-09-12

Total Pages: 298

ISBN-13: 1461444713

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Over the last fifty-plus years, the increased complexity and speed of integrated circuits have radically changed our world. Today, semiconductor manufacturing is perhaps the most important segment of the global manufacturing sector. As the semiconductor industry has become more competitive, improving planning and control has become a key factor for business success. This book is devoted to production planning and control problems in semiconductor wafer fabrication facilities. It is the first book that takes a comprehensive look at the role of modeling, analysis, and related information systems for such manufacturing systems. The book provides an operations research- and computer science-based introduction into this important field of semiconductor manufacturing-related research.

Metal-semiconductor Interfaces

Author: Akio Hiraki

Publisher: IOS Press

Published: 1995

Total Pages: 422

ISBN-13: 9784274900396

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Formation Of Semiconductor Interfaces - Proceedings Of The 4th International Conference

Author: J Pollman

Publisher: World Scientific

Published: 1994-06-09

Total Pages: 818

ISBN-13: 9814552399

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Semiconductor interfaces are of paramount importance in micro, nano- and optoelectronics. Basic as well as applied research on such systems is therefore of extremely high current interest. To meet the continuous need for a better understanding of semiconductor interfaces with respect to both their fundamental physical and chemical properties as well as their applications in modern opto- and microelectronics, the series of international conferences on the formation of semiconductor interfaces was begun. The fourth conference of the series held in Jülich addresses as main topics: clean semiconductor surfaces; adsorbates at semiconductor surfaces; metal-semiconductor, insulator-semiconductor and semiconductor-semiconductor interfaces; devices and wet chemical processes. The 12 invited lectures assess the present status of the research in important areas and about 180 contributed papers describe most recent achievements in the field.

Semiconductor Interfaces at the Sub-Nanometer Scale

Author: H.W.M Salemink

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 252

ISBN-13: 940112034X

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The Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale was held from 31 August to 2 September, 1992, in Riva del Garda. Italy. The aim of the workshop was to bring together experts in different aspects of the study of semiconductor interfaces and in small-scale devices where the interface properties can be very significant It was our aim that this would help focus research of the growth and characterization of semiconductor interfaces at the atomic scale on the issues that will have the greatest impact on devices of the future. Some 30 participants from industrial and academic research institutes and from 11 countries contributed to the workshop with papers on their recent wode. . 'There was ample time for discussion after each talk. as well as a summary discussion at the end of the meeting. The major themes of the meeting are described below. The meeting included several talks relating to the different growth techniques used in heteroepitaxial growth of semiconductors. Horikoshi discussed the atomistic processes involved in MBE, MEE and MOCVD, presenting results of experimental RHEED and photoluminescence measurements; Foxon compared the merits of MBE, MOCVD, and eBE growth; Molder described RHEED studies of Si/Ge growth by GSMBE, and Pashley discussed the role of surface reconstructions in MBE growth as seen from STM studies on GaAs. On the theoretical side, Vvedensky described several different methods to model growth: molecular dynamics, Monte Carlo techniques, and analytic modeling.

Run-to-Run Control in Semiconductor Manufacturing

Author: James Moyne

Publisher: CRC Press

Published: 2018-10-08

Total Pages: 368

ISBN-13: 1420040669

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Run-to-run (R2R) control is cutting-edge technology that allows modification of a product recipe between machine "runs," thereby minimizing process drift, shift, and variability-and with them, costs. Its effectiveness has been demonstrated in a variety of processes, such as vapor phase epitaxy, lithography, and chemical mechanical planarization. The only barrier to the semiconductor industry's widespread adoption of this highly effective process control is a lack of understanding of the technology. Run to Run Control in Semiconductor Manufacturing overcomes that barrier by offering in-depth analyses of R2R control.

Metal-semiconductor hybrid nanoparticles: Halogen induced shape control, hybrid synthesis and electrical transport

Author: Michaela Meyns

Publisher: diplom.de

Published: 2014-06-01

Total Pages: 211

ISBN-13: 3954897938

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Metal-semiconductor hybrid nanoparticles combine materials with different physical properties in one nanostructure. Charge separation processes and potentially increased conductivity in thin film devices make them promising candidates for advanced applications in photocatalysis or (opto) electronics. The work on hand deals with the preparation of CdSe nanoparticles that later act as seeds for the defined deposition of metals and with the electrical characterisation of monolayers of the resulting hybrid structures. In context with the shape control of the semiconductor component in a hot injection synthesis, the role of halogen compounds and the influence of their molecular structure are examined. Analytically as well as theoretically supported explanations for the formation of the evolving hexagonal pyramidal shape, which is especially favourable for metal deposition, are presented. The deposition of different metals onto the obtained semiconductor components is examined and unusual instabilities of an Au shell on CdSe hybrid nanoparticles are investigated. Furthermore, the impact of deposited Pt on the electrical transport of CdSe nanopyramids is demonstrated.