Compound Semiconductor Materials and Devices: Volume 1635

Compound Semiconductor Materials and Devices: Volume 1635 PDF

Author: F. (Shadi) Shahedipour-Sandvik

Publisher: Materials Research Society

Published: 2014-07-21

Total Pages: 0

ISBN-13: 9781605116129

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Compound semiconductors impact our lives in countless ways, with applications in photovoltaics, wireless and optical telecommunication, high-power electronics, and "green" energy. Recent areas of progress include sensing devices in biological and chemical environments, high-efficiency power devices, and photon-counting detectors. Although these materials offer significant advantages, including bandgap tailorability, high efficiency, high-temperature operation, and radiation tolerance, much work needs to be done to realize their full potential. This symposium proceedings volume represents recent advances in compound semiconductors for electronics, detection, and processing. It brought together researchers and engineers working on both fundamental materials research and device-related materials engineering, in order to address current problems and identify next-generation applications. This selection of papers demonstrates the cross-fertilization of ideas that will drive the successful adoption of these materials for new applications.

Compound Semiconductor Materials and Devices

Compound Semiconductor Materials and Devices PDF

Author: Zhaojun Liu

Publisher: Morgan & Claypool Publishers

Published: 2016-02-22

Total Pages: 75

ISBN-13: 1627058532

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Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.

Compound Semiconductor Bulk Materials and Characterizations

Compound Semiconductor Bulk Materials and Characterizations PDF

Author: Osamu Oda

Publisher: World Scientific

Published: 2007

Total Pages: 556

ISBN-13: 9812770380

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This book is concerned with compound semiconductor bulk materials and has been written for students, researchers and engineers in material science and device fabrication. It offers them the elementary and intermediate knowledge of compound semiconductor bulk materials necessary for entering this field. In the first part, the book describes the physical properties, crystal growth technologies, principles of crystal growth, various defects in crystals, characterization techniques and applications. In the second and the third parts, the book reviews various compound semiconductor materials, including important industrial materials and the results of recent research.

Compound Semiconductor Bulk Materials And Characterizations

Compound Semiconductor Bulk Materials And Characterizations PDF

Author: Osamu Oda

Publisher: World Scientific

Published: 2007-04-18

Total Pages: 556

ISBN-13: 9814502146

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This book is concerned with compound semiconductor bulk materials and has been written for students, researchers and engineers in material science and device fabrication. It offers them the elementary and intermediate knowledge of compound semiconductor bulk materials necessary for entering this field. In the first part, the book describes the physical properties, crystal growth technologies, principles of crystal growth, various defects in crystals, characterization techniques and applications. In the second and the third parts, the book reviews various compound semiconductor materials, including important industrial materials and the results of recent research.

Iii-v Compound Semiconductors

Iii-v Compound Semiconductors PDF

Author: Tingkai Li

Publisher: CRC Press

Published: 2019-08-30

Total Pages: 603

ISBN-13: 9780367383268

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Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more powerful, cost-effective processors. III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics covers recent progress in this area, addressing the two major revolutions occurring in the semiconductor industry: integration of compound semiconductors into Si microelectronics, and their fabrication on large-area Si substrates. The authors present a scientific and technological exploration of GaN, GaAs, and III-V compound semiconductor devices within Si microelectronics, building a fundamental foundation to help readers deal with relevant design and application issues. Explores silicon-based CMOS applications developed within the cutting-edge DARPA program Providing an overview of systems, devices, and their component materials, this book: Describes structure, phase diagrams, and physical and chemical properties of III-V and Si materials, as well as integration challenges Focuses on the key merits of GaN, including its importance in commercializing a new class of power diodes and transistors Analyzes more traditional III-V materials, discussing their merits and drawbacks for device integration with Si microelectronics Elucidates properties of III-V semiconductors and describes approaches to evaluate and characterize their attributes Introduces novel technologies for the measurement and evaluation of material quality and device properties Investi

Compound Semiconductor Electronics and Photonics: Volume 421

Compound Semiconductor Electronics and Photonics: Volume 421 PDF

Author: R. J. Shul

Publisher:

Published: 1996-10-14

Total Pages: 480

ISBN-13:

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III-V semiconductors have continued to find new applications in optical data transmission, full-color displays, automotive electronics and personal communication systems. Complex epitaxial growth, processing, device design and circuit architecture are all necessary for realization of these elements. This book brings together the diverse group of scientists and researchers that are required to develop the next-generation devices. The wide bandgap nitrides, GaN, AlN, InN and their alloys are featured. The commercial availability of blue- and green-light-emitting diodes based on the InGaN/AlGaN system, and the recent announcement of pulsed operation of a laser diode, have stimulated interest in the growth, characterization and processing of these materials. Potential applications in high-temperature/high-power electronics appear promising because of the good transport properties of these nitrides. Topics include: growth and characterization; photonics and processing; electronics and processing; wide bandgap semiconductors and novel devices and processing.

Characterization in Compound Semiconductor Processing

Characterization in Compound Semiconductor Processing PDF

Author: Yale Strausser

Publisher: Butterworth-Heinemann

Published: 1995

Total Pages: 224

ISBN-13:

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The book will have two major sections, one on Si based systems and the other on compound semiconductor systems. Although there are many materials common to both technologies, the applications, processing, and problems seen, are different enough to warrant this separation. In the silicon section there will be a chapter on semiconducting layers, such as epi SI, SOI layers, Si Ge films, etc., discussing the techniques used in problem-solving in these films. In the area of conducting films there will be chapters of doped poly Si, silicides and polycides, Al- and/or Cu-cased films, W-based films and one on barrier materials. Each of these systems is sufficiently different to benefit from a different author and a separate discussion of the types of problems encountered. This section will then be completed by a chapter or dielectric films. Even though there are a number of different applications for dielectrics, i.e. passivation films, intermetal dielectrics, gate oxides, field oxides, ad

New Materials and Devices Enabling 5G Applications and Beyond

New Materials and Devices Enabling 5G Applications and Beyond PDF

Author: Nadine Collaert

Publisher: Elsevier

Published: 2024-01-24

Total Pages: 369

ISBN-13: 0128234504

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New Materials and Devices for 5G Applications and Beyond focuses on the materials, device architectures and enabling integration schemes for 5G applications and emerging technologies. It gives a comprehensive overview of the trade-offs, challenges and unique properties of novel upcoming technologies. Starting from the application side and its requirements, the book examines different technologies under consideration for the different functions, both more conventional to exploratory, and within this context the book provides guidance to the reader on how to possibly optimize the system for a particular application. This book aims at guiding the reader through the technologies required to enable 5G applications, with the main focus on mm-wave frequencies, up to THz. New Materials and Devises for 5G Applications and Beyond is suitable for industrial researchers and development engineers, and researchers in materials science, device engineering and circuit design. Reviews challenges and emerging opportunities for materials, devices, and integration to enable 5G technologies Includes discussion of technologies such as RF-MEMs, RF FINFETs, and transistors based on current and emerging materials (InP, GaN, etc.) Focuses on mm-wave frequencies up to the terahertz regime