Characterization and Modeling of SOI RF Integrated Components

Characterization and Modeling of SOI RF Integrated Components PDF

Author: Morin Dehan

Publisher: Presses univ. de Louvain

Published: 2003

Total Pages: 238

ISBN-13: 9782930344393

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The boom of mobile communications leads to an increasing request of low cost and low power mixed mode integrated circuits. Maturity of SOI technology, and recent progresses of MOSFET's microwave performances, explain the success of silicon as compared to III-V technologies for low-cost multigigahertz analog applications. The design of efficient circuits requires accurate, wide-band models for both active and passive elements. Within this frame, passive and active components fabricated in SOI technologies have been studied. Various topologies of integrated transmission lines, like Coplanar Waveguides or thin film microstrip lines, have been analyzed. Also, a new physical model of integrated inductors has been developed. This model, based on a coupled line analysis of square spiral inductors, is scalable and independent of the technology used. Inductors with various spacing between strips, conductor widths, or number of turns can be simulated on different multi-layered substrates. Each layer that composes the substrate is defined using its electrical properties (permittivity, permeability, conductivity). The performances of integrated sub-micron MOSFETs are analyzed. New alternative structures of transistor (the Graded Channel MOSFET and the Dynamic Threshold MOSFET) are proposed to increase the performances of a CMOS technology for for analog, low power, low voltage, and microwave applications. They are studied from Low to High frequency. The graded channel MOSFET is an asymmetric doped channel MOSFET's which bring solutions for the problems of premature drain break-down, hot carrier effects, and threshold voltage (Vth) roll-off issues in deep submicrometer devices. The GCMOS processing is fully compatible with the conventional SOI MOSFET process flow, with no additional steps needed. The dynamic threshold voltage MOS is a MOS transistor for which the gate and the body channel are tied together. All DTMOS electrical properties can be deduced from standard MOS theory by introducing Vbs = Vgs. The main advantage of DTMOS over conventional MOS is its higher drive current at low bias conditions. To keep the body to source current as low as possible, the body bias voltage must be kept lower than 0.7 V. It seems obvious that the DTMOS transistor is an attractive component for low voltage applications.

Modeling and Characterization of RF and Microwave Power FETs

Modeling and Characterization of RF and Microwave Power FETs PDF

Author: Peter Aaen

Publisher: Cambridge University Press

Published: 2007-06-25

Total Pages: 375

ISBN-13: 113946812X

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This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.

Nonlinear Device Measurement, Characterization, and Modeling for High Power RF Applications

Nonlinear Device Measurement, Characterization, and Modeling for High Power RF Applications PDF

Author: Youngseo Ko

Publisher:

Published: 2013

Total Pages: 122

ISBN-13:

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Having characterized results under the developedmeasurement system, a new measurement based model with artificial neuron network (ANN) is finally proposed and applied to a SOI MOSFET device. The verification results demonstrate that the time-consuming measurement process can be dramatically reduced by using RTALP measurement data, and that fairly accurate large-signal RF device model can be easily extracted from these measurements using the ANN approach.

Cmos Rf Modeling, Characterization And Applications

Cmos Rf Modeling, Characterization And Applications PDF

Author: M Jamal Deen

Publisher: World Scientific

Published: 2002-04-10

Total Pages: 422

ISBN-13: 9814488925

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CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 µm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (Global Positioning System) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.

CMOS RF Modeling, Characterization and Applications

CMOS RF Modeling, Characterization and Applications PDF

Author: M. Jamal Deen

Publisher: World Scientific

Published: 2002

Total Pages: 426

ISBN-13: 9789810249052

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CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 æm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (Global Positioning System) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.

Silicon Analog Components

Silicon Analog Components PDF

Author: Badih El-Kareh

Publisher: Springer

Published: 2019-08-07

Total Pages: 648

ISBN-13: 3030150852

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This book covers modern analog components, their characteristics, and interactions with process parameters. It serves as a comprehensive guide, addressing both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. Based on the authors’ extensive experience in the development of analog devices, this book is intended for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science. Enables engineers to understand analog device physics, and discusses important relations between process integration, device design, component characteristics, and reliability; Describes in step-by-step fashion the components that are used in analog designs, the particular characteristics of analog components, while comparing them to digital applications; Explains the second-order effects in analog devices, and trade-offs between these effects when designing components and developing an integrated process for their manufacturing.

Design and Characterization of Integrated Varactors for RF Applications

Design and Characterization of Integrated Varactors for RF Applications PDF

Author: Inigo Gutierrez

Publisher: John Wiley & Sons

Published: 2007-04-30

Total Pages: 180

ISBN-13: 0470035919

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Varactors are passive semiconductor devices used in electronic circuits, as a voltage-controlled way of storing energy in order to boost the amount of electric charge produced. In the past, the use of low-cost fabrication processes such as complementary metal oxide semiconductor (CMOS) and silicon germanium (SiGe) were kept for integrated circuits working in frequency ranges below the GHz. Now, the increased working frequency of radio frequency integrated circuits (RF ICs) for communication devices, and the trend of system-on-chip technology, has pushed the requirements of varactors to the limit. As the frequency of RF applications continues to rise, it is essential that passive devices such as varactors are of optimum quality, making this a critical design issue. Initially describing the physical phenomena that occur in passive devices within standard IC fabrication processes, Design and Characterization of Integrated Varactors for RF Applications goes on to: present information on the design of wide band electrical varactor models (up to 5 GHz) which enable the accurate prediction of device performance; propose a specific methodology for the measurement of integrated varactors, covering on-wafer measurement structures, the calibration process, and detailed descriptions of the required equipment; explain de-embedding techniques and also analyse confidence level and uncertainty linked to the test set-up; examine the design of a voltage controlled oscillator (VCO) circuit as a practical example of the employment of methods discussed in the book. Providing the reader with the necessary technical knowledge for dealing with challenging VCO designs, this book is an essential guide for practising RF and microwave engineers working on the design of electronic devices for integrated circuits. It is also a useful reference for postgraduate students and researchers interested in electronic design for RF applications.

Passive RF Integrated Circuits

Passive RF Integrated Circuits PDF

Author: Pierre Saguet

Publisher: Wiley-ISTE

Published: 2009-12-02

Total Pages: 0

ISBN-13: 9781848211759

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This book, written by recognized experts in the field, is intended for designers of RF or microwave passive integrated circuits. It describes methods used for modeling passive circuits using the most common numerical analysis techniques (the method of moments, finite element methods, FDTD, TLM), and pays particular attention to propagation phenomena. Interconnections and packaging modeling are included, as well as an original method for multi-scale circuit modeling. Characterization and measurement methods in the time and frequency domains are the subject of two very detailed chapters. Measurement errors using Vector Network Analyzer (VNA ) and appropriate corrections are detailed and the divergences between all the various parameters S, Z, Y, h, T, ABCD are given. Time domain reflectometry and its use are also covered in detail.

Tunable RF Components and Circuits

Tunable RF Components and Circuits PDF

Author: Jeffrey L. Hilbert

Publisher: CRC Press

Published: 2018-09-03

Total Pages: 330

ISBN-13: 1498718922

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An Industry Perspective on Key Tunable Technologies and Applications Tunable RF Components and Circuits: Applications in Mobile Handsets provides a technical introduction to the state of the art in tunable radio frequency (RF) components, circuits, and applications and discusses the foundational work that has been done to date. Leading practitioners in the field share their expertise on tunable devices in mobile handset applications. Through these practical viewpoints, readers discover how to use tunable RF techniques and devices to develop successful product designs. A substantial portion of the book focuses on antennas and antenna tuning, reflecting the dominance of the antenna tuning application in today’s commercial market for tunable RF. The book explains how RF-microelectromechanical systems (RF-MEMS), barium strontium titinate (BST), silicon-on-insulator (SOI) field effect transistors (FETs), and high-performance complementary metal oxide semiconductors (CMOS) are used as enabling technologies for tunable functions in current and next-generation radio architectures. The book also describes power amplifier envelope tracking, an emerging and important technique for improving efficiency; presents a network operator’s perspective on the evolution of the handset front end; and explores emerging approaches to production testing of wireless devices.

Transistor Level Modeling for Analog/RF IC Design

Transistor Level Modeling for Analog/RF IC Design PDF

Author: Wladyslaw Grabinski

Publisher: Springer Science & Business Media

Published: 2006-07-01

Total Pages: 298

ISBN-13: 1402045565

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The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas.