Capture and Relaxation in Self-Assembled Semiconductor Quantum Dots

Capture and Relaxation in Self-Assembled Semiconductor Quantum Dots PDF

Author: Robson Ferreira

Publisher: Morgan & Claypool Publishers

Published: 2016-02-23

Total Pages: 148

ISBN-13: 1681741539

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This is an overview of different models and mechanisms developed to describe the capture and relaxation of carriers in quantum-dot systems. Despite their undisputed importance, the mechanisms leading to population and energy exchanges between a quantum dot and its environment are not yet fully understood. The authors develop a first-order approach to such effects, using elementary quantum mechanics and an introduction to the physics of semiconductors. The book results from a series of lectures given by the authors at the Master’s level.

Self-Assembled Quantum Dots

Self-Assembled Quantum Dots PDF

Author: Zhiming M Wang

Publisher: Springer Science & Business Media

Published: 2007-11-29

Total Pages: 470

ISBN-13: 0387741917

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This multidisciplinary book provides up-to-date coverage of carrier and spin dynamics and energy transfer and structural interaction among nanostructures. Coverage also includes current device applications such as quantum dot lasers and detectors, as well as future applications to quantum information processing. The book will serve as a reference for anyone working with or planning to work with quantum dots.

Semiconductor Quantum Dots

Semiconductor Quantum Dots PDF

Author: Y. Masumoto

Publisher: Springer Science & Business Media

Published: 2013-04-17

Total Pages: 500

ISBN-13: 3662050013

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Semiconductor quantum dots represent one of the fields of solid state physics that have experienced the greatest progress in the last decade. Recent years have witnessed the discovery of many striking new aspects of the optical response and electronic transport phenomena. This book surveys this progress in the physics, optical spectroscopy and application-oriented research of semiconductor quantum dots. It focuses especially on excitons, multi-excitons, their dynamical relaxation behaviour and their interactions with the surroundings of a semiconductor quantum dot. Recent developments in fabrication techniques are reviewed and potential applications discussed. This book will serve not only as an introductory textbook for graduate students but also as a concise guide for active researchers.

Quantum Dot Heterostructures

Quantum Dot Heterostructures PDF

Author: Dieter Bimberg

Publisher: John Wiley & Sons

Published: 1999-03-17

Total Pages: 350

ISBN-13: 9780471973881

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Da die Nachfrage nach immer schnelleren und kleineren Halbleiterbauelementen stetig wächst, sind Quanten-Dots und -Pyramiden rasant in den Mittelpunkt der Halbleiterforschung gerückt. Dieses Buch vermittelt einen umfassenden Überblick über den aktuellen Forschungsstand auf diesem Gebiet. Behandelt werden u.a. Fragen, wie Strukturen aufgebaut, wie sie charakterisiert werden und wie sie die Leistungsfähigkeit der Bauelemente bestimmen. (11/98)

Self-Assembled InGaAs/GaAs Quantum Dots

Self-Assembled InGaAs/GaAs Quantum Dots PDF

Author:

Publisher: Academic Press

Published: 1999-03-29

Total Pages: 385

ISBN-13: 0080864589

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This volume is concerned with the crystal growth, optical properties, and optical device application of the self-formed quantum dot, which is one of the major current subjects in the semiconductor research field.The atom-like density of states in quantum dots is expected to drastically improve semiconductor laser performance, and to develop new optical devices. However, since the first theoretical prediction for its great possibilities was presented in 1982, due to the difficulty of their fabrication process. Recently, the advent of self-organized quantum dots has made it possible to apply the results in important optical devices, and further progress is expected in the near future.The authors, working for Fujitsu Laboratories, are leading this quantum-dot research field. In this volume, they describe the state of the art in the entire field, with particular emphasis on practical applications.

Time-Resolved Electronic Relaxation Processes in Self-Organized Quantum Dots

Time-Resolved Electronic Relaxation Processes in Self-Organized Quantum Dots PDF

Author:

Publisher:

Published: 2005

Total Pages: 34

ISBN-13:

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The authors have performed a comprehensive set of experiments on the dynamics of electrons and holes in semiconductor quantum dots, and a complete picture of the dynamics as a function of carrier density and temperature has emerged. Specifically, they have used two- and three-pulse femtosecond differential transmission spectroscopy to study the dependence of quantum dot carrier dynamics on temperature. At low temperatures and densities, the rates for relaxation between the quantum dot confined states and for capture from the barrier region into the various dot levels could be directly determined. For electron-hole pairs generated directly in the quantum dot excited state, relaxation is dominated by electron-hole scattering, and occurs on a 5-ps time scale. Capture times from the barrier into the quantum dot are on the order of 2 ps (into the excited state) and 10 ps (into the ground state). The phonon bottleneck was clearly observed in low-density capture experiments, and the conditions for its observation (namely, the suppression of electron-hole scattering for non-geminately captured electrons) were determined. As temperature increases beyond about 100 K, the dynamics become dominated by the reemission of carriers from the lower dot levels due to the large density of states in the wetting layer and barrier region. Measurements of the gain dynamics show fast (130-fs) gain recovery due to intradot carrier-carrier scattering, and picosecond-scale capture. Direct measurement of the transparency density versus temperature shows the dramatic effect of carrier reemission for the quantum dots to thermally activated scattering. The carrier dynamics at elevated temperatures are thus strongly dominated by the high density of the high-energy continuum states relative to the dot-confined levels. Deleterious hot carrier effects can be suppressed in quantum dot lasers by resonant tunneling injection.

Quantum Dots

Quantum Dots PDF

Author: Lucjan Jacak

Publisher: Springer Science & Business Media

Published: 2013-06-29

Total Pages: 176

ISBN-13: 3642720021

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We present an overview of the theoretical background and experimental re sults in the rapidly developing field of semiconductor quantum dots - systems 8 6 of dimensions as small as 10- -10- m (quasi-zero-dimensional) that contain a small and controllable number (1-1000) of electrons. The electronic structure of quantum dots, including the energy quan tization of the single-particle states (due to spatial confinement) and the evolution of these (Fock-Darwin) states in an increasing external magnetic field, is described. The properties of many-electron systems confined in a dot are also studied. This includes the separation of the center-of-mass mo tion for the parabolic confining potential (and hence the insensitivity of the transitions under far infrared radiation to the Coulomb interactions and the number of particles - the generalized Kohn theorem) and the effects due to Coulomb interactions (formation of the incompressible magic states at high magnetic fields and their relation to composite jermions), and finally the spin-orbit interactions. In addition, the excitonic properties of quantum dots are discussed, including the energy levels and the spectral function of a single exciton, the relaxation of confined carriers, the metastable states and their effect on the photoluminescence spectrum, the interaction of an exciton with carriers, and exciton condensation. The theoretical part of this work, which is based largely on original re sults obtained by the authors, has been supplemented with descriptions of various methods of creating quantum-dot structures.

Self Assembled Semiconductor Quantum Dots for Spin Based All Optical and Electronic Quantum Computing

Self Assembled Semiconductor Quantum Dots for Spin Based All Optical and Electronic Quantum Computing PDF

Author:

Publisher:

Published: 2008

Total Pages: 27

ISBN-13:

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This project involved the study of self-assembled quantum dots as hosts for spin based qubits. Both semiconductor quantum dots, nanowires, and organic quantum dots were studied and the spin relaxation times were measured. The organic Alq3 appears to have very long longitudinal spin relaxation time of nearly 1 second at a temperature of 100 K, and a nearly temperature independent transverse relaxation time> 3 nsec in the range 2-300 K. This relaxation time is sufficient to fulfill the Knill criterion for fault-tolerant quantum computing at room temperature. Since organics have special selection rules for radiative transitions whereby triplet electron-hole pairs are dark excitons and only singlets are radiative, there is a natural qubit read out scheme for organic quantum dots. We have also studied inorganic semiconductor quantum dots, but find them inferior to their organic counterparts for spin based quantum computing, primarily because spin-orbit interactions are much stronger in inorganic quantum dots, leading to much faster spin dephasing.

Optical and Electrical Properties of Single Self-Assembled Quantum Dots in Lateral Electric Fields

Optical and Electrical Properties of Single Self-Assembled Quantum Dots in Lateral Electric Fields PDF

Author: Malte Huck

Publisher: diplom.de

Published: 2010-03-25

Total Pages: 137

ISBN-13: 3836644398

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Inhaltsangabe:Abstract: Chapter 1: In this thesis we investigate the optical properties of self-assembled quantum dots exposed to a lateral electric field. As a result of the electric field the wave functions of electrons and holes inside the quantum dot are manipulated, which makes it possible to tune their energy levels and control the optical properties of the system. The possibility of tuning the emission energy of different few particle states using this method makes this system very promising for the use of a source of polarization entangled photons as discussed in the following sections. In Section 1.1 the concept of entangled states is introduced together with a brief historical overview. The possibility of using the exciton biexciton cascade of a self-assembled quantum dot for the generation of entangled photon pairs is presented in Section 1.2. Chapter 2: In this chapter we introduce the concept of quantum dots and demonstrate their optical emission properties. In Section 2.1 the quantum dot is introduced as a three-dimensional charge carrier trap. Several types of quantum dots are presented in an overview. In Section 2.2 we discuss the physical effects that occur on the way from bulk semiconductor material to the three-dimensional charge carrier confinement in the case of quantum dots. The growth of self-assembled quantum dot samples is the topic of Section 2.3, where the technique of molecular beam epitaxy is introduced (Section 2.3.1). This technique is used to grow the semiconductor quantum dots via heteroepitaxy in the Stranski-Krastanov growth mode (Section 2.3.2). Quantum dots are commonly referred to as artificial atoms due to their atomlike emission features. The origin for this expression is explained in Section 2.4 on the basis of the energetic structure of self-assembled quantum dots. The optical properties of quantum dots are discussed in Section 2.5, beginning with an introduction to the experimental setup that has been used to investigate the quantum dots during this thesis (Section 2.5.1). Different optical excitation modes are presented in Section 2.5.2 and in Section 2.5.3 we discuss, how to achieve a low enough quantum dot density on the analyzed samples. Section 2.5.4 deals with the photoluminescence of different exciton states and in Section 2.5.5 we present how these lines can be identified via power dependent measurements. Finally, the concept of initial charges in self-assembled quantum dots is presented in [...]