Ambipolar Materials and Devices

Ambipolar Materials and Devices PDF

Author: Ye Zhou

Publisher: Royal Society of Chemistry

Published: 2020-09-15

Total Pages: 463

ISBN-13: 1788018680

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This book highlights recent development of ambipolar materials involving materials design, fundamental principles, interface modifications, device structures, characteristics and promising applications.

Ambipolar Materials and Devices

Ambipolar Materials and Devices PDF

Author: Ye Zhou

Publisher: Royal Society of Chemistry

Published: 2020-09-04

Total Pages: 463

ISBN-13: 1788019288

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Ambipolar materials represent a class of materials where positive and negative charge carriers can both transport concurrently. In recent years, a diverse range of materials have been synthesized and utilized for implementing ambipolar charge transport, with applications in high‐density data storage, field effect transistors, nanotransitors, photonic memory, biomaterial-based memories and artificial synapses. This book highlights recent development of ambipolar materials involving materials design, fundamental principles, interface modifications, device structures, ambipolar characteristics and promising applications. Challenges and prospects for investigating ambipolar materials in electronics and optoelectronics are also discussed. With contributions from global leaders in the field, this title will appeal to graduate students and researchers who want to understand the design, materials characteristics, device operation principles, specialized device application and mechanisms of the latest ambipolar materials.

Ambipolar and Light-Emitting Organic Field-Effect Transistors

Ambipolar and Light-Emitting Organic Field-Effect Transistors PDF

Author:

Publisher: Cuvillier Verlag

Published: 2005-08-10

Total Pages: 180

ISBN-13: 3736915357

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Ziel dieser Arbeit war die Herstellung und Charakterisierung eines lichtemittierenden ambipolaren organischen Feldeffekttransistors (OFET). In der Literatur wurden lichtemittierende ambipolare Feldeffekttransistoren auf der Basis organischer Moleküle, die von Interesse für neue elektro-optische Bauelemente sind, bisher noch nicht beschrieben. Für die Realisierung eines lichtemittierenden ambipolaren OFETs wurden drei verschiedenene Strategien verfolgt: Zum einen wurden konventionelle Einschichtstrukturen aufihre Elektrolumineszenzeigenschaften hin untersucht. Desweiteren wurden Zweischichtstrukturen auf der Basis eines Elektronen- und eines Löchertransportmaterials hergestellt. Schließlich wurde ein völlig neues Konzept basierend auf koverdampften, d.h. gemischten Filmen bestehend aus Löcher- und Elektronentransportmaterial, realisiert. Die Einschichtstrukturen für sich waren zwar emittierend, doch ist aufgrund der unipolaren Transporteigenschaften der organischen Materialien die Lichtemission auf einen Bereich an einem Kontakt beschränkt. Im Gegensatz dazu wurde an den Zweischichtstrukturen eine ambipolare Transportcharakteristik gemessen, jedoch keine Elektrolumineszenz beobachtet. Schließlich konnte über das neue Konzept der koverdampften Bulk-Heterostruktur erstmals Elektrolumineszenz in einem ambipolaren OFET beobachtet werden. The goal of this thesis was the fabrication and characterization of a light-emitting am- bipolar organic field-effect transistor (OFET). In the literature, light-emitting ambipolar field-effect transistors (FET) based on small molecules, which are of interest for novel electro-optical devices, have not yet been described. For the realization of such a light- emitting ambipolar OFET, three different strategies were pursued: Firstly, conventional single-layer OFETs were investigated in terms of their electroluminescent properties. Secondly, bilayer heterostructures based on an electron- and a hole-transport material were prepared. Thirdly, a novel concept based on coevaporated, i.e. mixed films consisting of an electron- and a hole-transport material, has been realized. Although the single-layer structures were light-emitting, the unipolar transport properties of the organic materials restrict light emission to a region close to one contact. In contrast, in bilayer heterostructures an ambipolar transport characteristics was measured, but no electroluminescence (EL) observed. Finally, with the novel concept of a coevaporated bulk heterostructure, EL in an ambipolar OFET could be observed for the first time.

Ambipolar Independent Double Gate FET (Am -IDGFET) Logic Design

Ambipolar Independent Double Gate FET (Am -IDGFET) Logic Design PDF

Author: Kotb Jabeur

Publisher:

Published: 2012

Total Pages: 42

ISBN-13:

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The continuous growth of global demand for semiconductor products (in a broad range of sectors, such as security, healthcare, entertainment, connectivity, energy, etc.) has been both enabled and fuelled by Moore's law and regular doubling of circuit density and performance increases. However, as CMOS technology scaling begins to reach its theoretical limits, the ITRS predicts a new era known as "Beyond CMOS". Novel materials and devices show an ability to complement or even replace the CMOS transistor or its channel in systems on chip with silicon-based technology. This has led to the identification of promising phenomena such as ambipolar conduction in quasi one- and zero-dimensional structures, for example in carbon nanotubes, graphene and silicon nanowires. Ambipolarity, in a dual-gate context (DG-FETs), means that n- and p-type behavior can be observed in the same device depending on the backgate voltage polarity. In addition to their attractive performances and the low power consumption, ambipolar double gate devices enable the development of completely new circuit structures and design paradigms. Conventional logic synthesis techniques cannot represent the capability of DG-FETs to operate as either n-type or p-type switches and new techniques must be found to build optimal logic. The work in this thesis explores design techniques to enable the use of such devices by defining generic approaches and design techniques based on ambipolar DG-FETs. Two different contexts are tackled: (i) improving standard cell logic design with more compact structures and better performance, as well as low-power design techniques exploiting the fourth terminal of the device, and (ii) adapting conventional logic synthesis and verification techniques such as Binary Decision Diagrams or Function Classification to ambipolar DGFETs in order to build reconfigurable logic cells. The proposed methods and techniques are validated and evaluated in a case study focused on DG-CNTFET through accurate simulations, using the most mature and recent DG-CNTFET model available in the literature.

Handbook of Visual Display Technology

Handbook of Visual Display Technology PDF

Author: Janglin Chen

Publisher: Springer

Published: 2012-01-23

Total Pages: 2700

ISBN-13: 9783540795681

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This handbook offers a comprehensive description of the science, technology, economic and human interface factors associated with the displays industry. With expert contributions from over 150 international display professionals and academic researchers, it covers all classes of display device and discusses established principles, emergent technologies, and particular areas of application.

Electrical Memory Materials and Devices

Electrical Memory Materials and Devices PDF

Author: Wen-Chang Chen

Publisher: Royal Society of Chemistry

Published: 2015-10-21

Total Pages: 408

ISBN-13: 1782621164

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Providing a full overview of organic/polymeric memory nanoscale materials, which are a potential substitute for conventional semiconductor memory systems.

Electrical Characterization of Organic Electronic Materials and Devices

Electrical Characterization of Organic Electronic Materials and Devices PDF

Author: Professor Peter Stallinga

Publisher: John Wiley & Sons

Published: 2009-10-08

Total Pages: 316

ISBN-13: 0470750170

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Think like an electron Organic electronic materials have many applications and potential in low-cost electronics such as electronic barcodes and in light emitting devices, due to their easily tailored properties. While the chemical aspects and characterization have been widely studied, characterization of the electrical properties has been neglected, and classic textbook modeling has been applied. This is most striking in the analysis of thin-film transistors (TFTs) using thick “bulk” transistor (MOS-FET) descriptions. At first glance the TFTs appear to behave as regular MOS-FETs. However, upon closer examination it is clear that TFTs are unique and merit their own model. Understanding and interpreting measurements of organic devices, which are often seen as black-box measurements, is critical to developing better devices and this, therefore, has to be done with care. Electrical Characterization of Organic Electronic Materials and Devices Gives new insights into the electronic properties and measurement techniques for low-mobility electronic devices Characterizes the thin-film transistor using its own model Links the phenomena seen in different device structures and different measurement techniques Presents clearly both how to perform electrical measurements of organic and low-mobility materials and how to extract important information from these measurements Provides a much-needed theoretical foundation for organic electronics

Gallium Arsenide Based Metal-Semiconductor-Metal Devices and Detectors

Gallium Arsenide Based Metal-Semiconductor-Metal Devices and Detectors PDF

Author: Eric Michael Gallo

Publisher:

Published: 2010

Total Pages: 268

ISBN-13:

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Each year the creation and refinement of new material growth techniques give rise to novel material systems for electronic device exploration. A metal-semiconductor-metal (MSM) device is the simplest electronic device possible, consisting of two metal contacts on a semiconducting channel. Despite their simplicity, these devices can operate as high performance detectors as well as enable rapid characterization of novel electronic materials. This thesis will discuss the fabrication and characterization of MSM devices on a two-dimensional electron hole gas (2DEHG) and GaAs-based nanowires. 2DEHG structures consist of two spatial separated quantum wells of opposite charge. These devices exhibit a high-speed photo-response, a two plateau varactor response and give rise to several unexplained photoluminescence peaks. GaAs-based nanowire MSMs offer the opportunity to fabricate many of the well known bulk III-V semiconductor devices on the nanoscale. Accomplishing this requires quality ohmic contacts. Several fabrication methods to create ohmic contacts on GaAs nanowires are described, as well as characterization of the light response of these devices and results demonstrating ambipolar transport in a wide bandgap material. The devices offer promise as high speed on-chip interconnects for digital circuits.

Organic Light-Emitting Materials and Devices

Organic Light-Emitting Materials and Devices PDF

Author: Zhigang Rick Li

Publisher: CRC Press

Published: 2017-12-19

Total Pages: 813

ISBN-13: 1439882800

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Organic Light-Emitting Materials and Devices provides a single source of information covering all aspects of OLEDs, including the systematic investigation of organic light-emitting materials, device physics and engineering, and manufacturing and performance measurement techniques. This Second Edition is a compilation of the advances made in recent years and of the challenges facing the future development of OLED technology. Featuring chapters authored by internationally recognized academic and industrial experts, this authoritative text: Introduces the history, fundamental physics, and potential applications of OLEDs Reviews the synthesis, properties, and device performance of electroluminescent materials used in OLEDs Reflects the current state of molecular design, exemplifying more than 600 light-emitting polymers and highlighting the most efficient materials and devices Explores small molecules-based OLEDs, detailing hole- and electron-injection and electron-transport materials, electron- and hole-blocking materials, sensitizers, and fluorescent and phosphorescent light-emitting materials Describes solution-processable phosphorescent polymer LEDs, energy transfer processes, polarized OLEDs, anode materials, and vapor deposition manufacturing techniques employed in OLED fabrication Discusses flexible display, the backplane circuit technology for organic light-emitting displays, and the latest microstructural characterization and performance measurement techniques Contains abundant diagrams, device configurations, and molecular structures clearly illutrating the presented ideas Organic Light-Emitting Materials and Devices, Second Edition offers a comprehensive overview of the OLED field and can serve as a primary reference for those needing additional information in any particular subarea of organic electroluminescence. This book should attract the attention of materials scientists, synthetic chemists, solid-state physicists, and electronic device engineers, as well as industrial managers and patent lawyers engaged in OLED-related business areas.